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Category:G11C16/10
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Pages in category "G11C16/10"
The following 200 pages are in this category, out of 518 total.
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- 17461278. THREE-DIMENSIONAL ONE TIME PROGRAMMABLE MEMORY simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17706097. NONVOLATILE MEMORY AND STORAGE DEVICE INCLUDING SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17742879. NON-VOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17806103. NONVOLATILE MEMORY DEVICE AND STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17810067. STORAGE DEVICE AND OPERATING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17817408. MEMORY DEVICE AND PROGRAM METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17818613. CONFIGURABLE TYPES OF WRITE OPERATIONS simplified abstract (Micron Technology, Inc.)
- 17819826. DETECTING A MEMORY WRITE RELIABILITY RISK WITHOUT USING A WRITE VERIFY OPERATION simplified abstract (Micron Technology, Inc.)
- 17823191. PARTIAL BLOCK READ VOLTAGE OFFSET simplified abstract (Micron Technology, Inc.)
- 17830800. CROSS-TEMPERATURE COMPENSATION IN NON-VOLATILE MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 17837345. OPEN BLOCK BOUNDARY GROUP PROGRAMMING FOR NON-VOLATILE MEMORY simplified abstract (Western Digital Technologies, Inc.)
- 17838481. Storage System and Method for Inference of Read Thresholds Based on Memory Parameters and Conditions simplified abstract (Western Digital Technologies, Inc.)
- 17842278. ERROR AVOIDANCE FOR PARTIALLY PROGRAMMED BLOCKS OF A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
- 17847545. NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17847948. STORAGE CONTROLLER AND STORAGE DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17852057. METHOD OF PROGRAMMING NON-VOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17852129. NON-VOLATILE MEMORY WITH PRECISE PROGRAMMING simplified abstract (Western Digital Technologies, Inc.)
- 17860701. MANAGING ERROR COMPENSATION USING CHARGE COUPLING AND LATERAL MIGRATION SENSITIVITY simplified abstract (Micron Technology, Inc.)
- 17860711. MANAGING PROGRAM VERIFY VOLTAGE OFFSETS FOR CHARGE COUPLING AND LATERAL MIGRATION COMPENSATION IN MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 17868900. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17874100. Non-Volatile Memory Power Cycle Protection Mechanism simplified abstract (Apple Inc.)
- 17875827. APPARATUS WITH CIRCUIT MANAGEMENT MECHANISM AND METHODS FOR OPERATING THE SAME simplified abstract (Micron Technology, Inc.)
- 17876346. MEMORY CELL VOLTAGE LEVEL SELECTION simplified abstract (Micron Technology, Inc.)
- 17881009. MEMORY DEVICE AND METHOD FOR DETERMINING START POINT AND END POINT OF VERIFICATION OPERATION OF TARGET STATE DURING PROGRAMMING simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17884107. MANAGING COMPENSATION FOR CELL-TO-CELL COUPLING AND LATERAL MIGRATION IN MEMORY DEVICES USING SEGMENTATION simplified abstract (Micron Technology, Inc.)
- 17884113. MANAGING COMPENSATION FOR CELL-TO-CELL COUPLING AND LATERAL MIGRATION IN MEMORY DEVICES BASED ON A SENSITIVITY METRIC simplified abstract (Micron Technology, Inc.)
- 17887348. INDEPENDENT SENSING TIMES simplified abstract (Micron Technology, Inc.)
- 17888225. ADAPTIVE SENSING TIME FOR MEMORY OPERATIONS simplified abstract (Micron Technology, Inc.)
- 17894248. APPARATUS AND METHODS FOR PROGRAMMING DATA STATES OF MEMORY CELLS simplified abstract (Micron Technology, Inc.)
- 17894528. ADAPTIVE ERROR AVOIDANCE IN THE MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 17897184. PADDING IN FLASH MEMORY BLOCKS simplified abstract (Micron Technology, Inc.)
- 17897441. MANAGING DEFECTIVE BLOCKS DURING MULTI-PLANE PROGRAMMING OPERATIONS IN MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 17899409. TWO-PASS CORRECTIVE PROGRAMMING FOR MEMORY CELLS THAT STORE MULTIPLE BITS AND POWER LOSS MANAGEMENT FOR TWO-PASS CORRECTIVE PROGRAMMING simplified abstract (Micron Technology, Inc.)
- 17938153. APPARATUS WITH READ LEVEL MANAGEMENT AND METHODS FOR OPERATING THE SAME simplified abstract (Micron Technology, Inc.)
- 17939021. STORAGE SYSTEM AND OPERATING METHOD OF STORAGE CONTROLLER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17941831. ADAPTIVE PRE-READ MANAGEMENT IN MULTI-PASS PROGRAMMING simplified abstract (Micron Technology, Inc.)
- 17944692. WRITE-ONCE MEMORY ENCODED DATA simplified abstract (Micron Technology, Inc.)
- 17948556. DRIFT COMPENSATION FOR CODEWORDS IN MEMORY simplified abstract (Micron Technology, Inc.)
- 17953003. FLASH MEMORY DEVICE AND DATA RECOVER READ METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17955858. OPERATION METHOD OF MEMORY DEVICE AND OPERATION METHOD OF MEMORY SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17958386. NONVOLATILE MEMORY DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 17960346. NON-VOLATILE MEMORY DEVICE AND PROGRAMMING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17961048. SOLID STATE DRIVE (SSD) AND OPERATING METHOD simplified abstract (Samsung Electronics Co., Ltd.)
- 17970315. APPARATUS WITH MULTI-BIT CELL READ MECHANISM AND METHODS FOR OPERATING THE SAME simplified abstract (Micron Technology, Inc.)
- 17982081. FLASH MEMORY DEVICE HAVING MULTI-STACK STRUCTURE AND CHANNEL SEPARATION METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18064635. NONVOLATILE MEMORY DEVICE AND METHOD OF PROGRAMMING IN THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18067224. NON-VOLATILE MEMORY DEVICE, STORAGE DEVICE INCLUDING THE SAME, AND READ METHOD THEREOF simplified abstract (Samsung Electronics Co., Ltd.)
- 18068337. STORAGE DEVICES AND METHODS OF OPERATING STORAGE DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18079433. OPERATION METHOD OF NONVOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18088046. NONVOLATILE MEMORY DEVICE AND OPERATION METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18103496. NONVOLATILE MEMORY DEVICE INCLUDING SELECTION TRANSISTORS AND OPERATING METHOD THEREOF simplified abstract (SK hynix Inc.)
- 18103754. NON-VOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME AND PROGRAM METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18109338. MEMORY MODULES INCLUDING A MIRRORING CIRCUIT AND METHODS OF OPERATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18132802. MEMORY DEVICE AND PROGRAM OPERATION THEREOF simplified abstract (YANGTZE MEMORY TECHNOLOGIES CO., LTD.)
- 18151734. AUTOMATIC PROGRAM VOLTAGE SELECTION NETWORK simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18177877. MEMORY SYSTEM AND METHOD FOR CONTROLLING SEMICONDUCTOR MEMORY simplified abstract (Kioxia Corporation)
- 18183008. SEMICONDUCTOR MEMORY DEVICE simplified abstract (SK hynix Inc.)
- 18193474. MEMORY DEVICE FOR PERFORMING PROGRAM OPERATION AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
- 18194468. MEMORY DEVICE RELATED TO A PROGRAM OPERATION, METHOD OF OPERATING THE MEMORY DEVICE, AND STORAGE DEVICE INCLUDING THE MEMORY DEVICE simplified abstract (SK hynix Inc.)
- 18201685. MEMORY PROGRAMMING METHOD, MEMORY DEVICE, AND MEMORY SYSTEM simplified abstract (Yangtze Memory Technologies Co., Ltd.)
- 18203223. OUT-OF-ORDER PROGRAMMING OF FIRST WORDLINE IN A PHYSICAL UNIT OF A MEMORY DEVICE simplified abstract (MICRON TECHNOLOGY, INC.)
- 18205835. MEMORY DEVICE AND OPERATION THEREOF simplified abstract (YANGTZE MEMORY TECHNOLOGIES CO., LTD.)
- 18223358. GENERATION OF QUICK PASS WRITE BIASES IN A MEMORY DEVICE simplified abstract (WESTERN DIGITAL TECHNOLOGIES, INC.)
- 18225735. LOOP DEPENDENT BIT LINE AND READ BIASES IN A MEMORY DEVICE simplified abstract (WESTERN DIGITAL TECHNOLOGIES, INC.)
- 18229748. OPTIMIZED READ CURRENT CONSUMPTION BASED ON LOWER PAGE READ INFORMATION FOR NON-VOLATILE MEMORY APPARATUS (Western Digital Technologies, Inc.)
- 18230371. CHANNEL PRE-CHARGE PROCESS FOR MEMORY DEVICES (Western Digital Technologies, Inc.)
- 18231127. MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
- 18232609. VPASS AUTO LAYER COMPENSATION IN A MEMORY DEVICE (Western Digital Technologies, Inc.)
- 18233420. CORRECTIVE PROGRAM VERIFY OPERATION WITH IMPROVED READ WINDOW BUDGET RETENTION simplified abstract (Micron Technology, Inc.)
- 18234429. MEMORY DEVICES WITH A LOWER EFFECTIVE PROGRAM VERIFY LEVEL simplified abstract (Micron Technology, Inc.)
- 18237793. MEMORY DEVICE AND METHOD FOR PERFORMING CACHE PROGRAM ON MEMORY DEVICE simplified abstract (YANGTZE MEMORY TECHNOLOGIES CO., LTD.)
- 18237815. DYNAMIC LATCHES ABOVE A THREE-DIMENSIONAL NON-VOLATILE MEMORY ARRAY simplified abstract (Micron Technology, Inc.)
- 18238212. NONVOLATILE MEMORY DEVICE, OPERATION METHOD OF A NONVOLATILE MEMORY DEVICE, AND OPERATION METHOD OF A CONTROLLER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18239193. MEMORY DEVICES WITH PROGRAM VERIFY LEVELS BASED ON COMPENSATION VALUES simplified abstract (Micron Technology, Inc.)
- 18239589. DATA FLIP-FLOP CIRCUIT OF NONVOLATILE MEMORY DEVICE AND NONVOLATILE MEMORY DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18242232. MEMORY DEVICE AND OPERATING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18295726. APPARATUS AND METHOD FOR PROGRAMMING AND VERIFYING DATA IN A NONVOLATILE MEMORY DEVICE simplified abstract (SK hynix Inc.)
- 18296828. SEMICONDUCTOR DEVICE RELATED TO PERFORMANCE OF A PROGRAM OPERATION AND METHOD OF OPERATING THE SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
- 18299714. SEMICONDUCTOR DEVICE CAPABLE OF CHECKING DETERIORATION OF SELECT TRANSISTOR AND OPERATING METHOD THEREOF simplified abstract (SK hynix Inc.)
- 18300958. MEMORY DEVICE FOR PERFORMING FOGGY-FINE PROGRAM OPERATION AND METHOD OF OPERATING THE MEMORY DEVICE simplified abstract (SK hynix Inc.)
- 18302728. MEMORY DEVICE AND METHOD OF OPERATING THE MEMORY DEVICE simplified abstract (SK hynix Inc.)
- 18306654. MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18310760. SEMICONDUCTOR DEVICE PERFORMING PROGRAM OPERATION AND OPERATING METHOD THEREOF simplified abstract (SK hynix Inc.)
- 18317362. MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
- 18318725. MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
- 18321576. PAGE BUFFER, MEMORY DEVICE INCLUDING PAGE BUFFER AND MEMORY SYSTEM INCLUDING MEMORY DEVICE simplified abstract (SK hynix Inc.)
- 18321617. MEMORY DEVICE AND METHOD OF OPERATING THE MEMORY DEVICE simplified abstract (SK hynix Inc.)
- 18323158. MEMORY PROGRAMMING simplified abstract (Yangtze Memory Technologies Co., Ltd.)
- 18330202. MEMORY DEVICE, PROGRAMMING METHOD OF MEMORY DEVICE, AND MEMORY SYSTEM simplified abstract (YANGTZE MEMORY TECHNOLOGIES CO., LTD.)
- 18331689. MEMORY DEVICE PERFORMING PROGRAM OPERATION AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
- 18333366. MEMORY DEVICE AND OPERATING METHOD THEREOF simplified abstract (SK hynix Inc.)
- 18338857. MEMORY DEVICE WITH IMPROVED THRESHOLD VOLTAGE DISTRIBUTION AND OPERATING METHOD THEREOF simplified abstract (Samsung Electronics Co., Ltd.)
- 18344677. SEMICONDUCTOR MEMORY DEVICE FOR PERFORMING BLIND PROGRAM OPERATION AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
- 18347401. SEMICONDUCTOR DEVICE AND OPERATING METHOD OF SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
- 18352963. MEMORY DEVICE AND OPERATING METHOD THEREOF simplified abstract (SK hynix Inc.)
- 18356051. MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
- 18356222. MEMORY DEVICE FOR PERFORMING READ OPERATION AND OPERATING METHOD THEREOF simplified abstract (SK hynix Inc.)
- 18357339. NON-VOLATILE MEMORY WTH LOOP DEPENDANT RAMP-UP RATE simplified abstract (SanDisk Technologies LLC)
- 18357489. NON-VOLATILE MEMORY WITH LOWER CURRENT PROGRAM-VERIFY simplified abstract (SanDisk Technologies LLC)
- 18361132. NONVOLATILE MEMORY INCLUDING ON-DIE-TERMINATION CIRCUIT AND STORAGE DEVICE INCLUDING THE NONVOLATILE MEMORY simplified abstract (Samsung Electronics Co., Ltd.)
- 18362952. MEMORY CIRCUIT AND METHOD OF OPERATING SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18367075. NON-VOLATILE 3D MEMORY SEARCH ARCHITECTURE (Macronix International Co., Ltd.)
- 18368951. BIT LINE TIMING BASED CELL TRACKING QUICK PASS WRITE FOR PROGRAMMING NON-VOLATILE MEMORY APPARATUSES (Western Digital Technologies, Inc.)
- 18369028. THRESHOLD VOLTAGE BUDGET BY EMPLOYING AN OXIDE-NITRIDE PITCH DEPENDENT THRESHOLD VOLTAGE WINDOW (Western Digital Technologies, Inc.)
- 18369296. NEIGHBOR PLANE DISTURB (NPD) DETECTION FOR MEMORY DEVICES (Western Digital Technologies, Inc.)
- 18369576. REVIVING FAULTY NAND BY AI DATA MODULATION (SAMSUNG ELECTRONICS CO., LTD.)
- 18372949. STORAGE DEVICE AND STORAGE SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18374717. OPERATING METHOD OF A NONVOLATILE MEMORY DEVICE FOR PROGRAMMING MULTI-PAGE DATA simplified abstract (Samsung Electronics Co., Ltd.)
- 18382325. NON-VOLATILE MEMORY DEVICE, STORAGE DEVICE HAVING THE SAME AND OPERATING METHOD OF NON-VOLATILE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18389140. TRIM SETTING DETERMINATION FOR A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
- 18392161. Matrix-Vector Multiplications Based on Charge-Summing Memory Cell Strings simplified abstract (IMEC VZW)
- 18404742. ARCHITECTURE AND METHOD FOR NAND MEMORY OPERATION simplified abstract (Yangtze Memory Technologies Co., Ltd.)
- 18408126. STORAGE DEVICE AND METHOD OF OPERATING THE SAME (Samsung Electronics Co., Ltd.)
- 18409089. MEMORY DEVICE, OPERATION METHOD THEREOF, AND MEMORY SYSTEM (Yangtze Memory Technologies Co., Ltd.)
- 18409344. MEMORY DEVICE INCLUDING STRING SELECT TRANSISTORS HAVING DIFFERENT THRESHOLD VOLTAGES AND METHOD OF OPERATING THE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18411348. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SEMICONDUCTOR MEMORY DEVICE (SK hynix Inc.)
- 18411532. DRAIN-SIDE WORDLINE VOLTAGE BOOSTING TO REDUCE LATERAL ELECTRON FIELD DURING A PROGRAMMING OPERATION simplified abstract (Micron Technology, Inc.)
- 18413596. SEMICONDUCTOR DEVICE INCLUDING CHARGE RETENTION NODE (SK hynix Inc.)
- 18423161. MEMORY DEVICE PERFORMING SIGNED MULTIPLICATION USING LOGICAL STATES OF MEMORY CELLS simplified abstract (Micron Technology, Inc.)
- 18423174. MEMORY DEVICE FOR SUMMATION OF OUTPUTS OF SIGNED MULTIPLICATIONS simplified abstract (Micron Technology, Inc.)
- 18423178. MEMORY DEVICE FOR SIGNED MULTI-BIT TO MULTI-BIT MULTIPLICATIONS simplified abstract (Micron Technology, Inc.)
- 18423181. MEMORY DEVICE FOR MULTIPLICATION USING MEMORY CELLS WITH DIFFERENT THRESHOLDS BASED ON BIT SIGNIFICANCE simplified abstract (Micron Technology, Inc.)
- 18426117. HYBRID DYNAMIC WORD LINE START VOLTAGE simplified abstract (Micron Technology, Inc.)
- 18434404. MEMORY WITH PARTIAL ARRAY REFRESH simplified abstract (Lodestar Licensing Group LLC)
- 18437123. MEMORY DEVICE, OPERATION METHOD THEREOF, AND READABLE STORAGE MEDIUM (Yangtze Memory Technologies Co., Ltd.)
- 18438636. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18450607. MEMORY SYSTEM AND NON-VOLATILE MEMORY simplified abstract (Kioxia Corporation)
- 18451104. SEMICONDUCTOR MEMORY DEVICE FOR PERFORMING PROGRAM OPERATION simplified abstract (SK hynix Inc.)
- 18452573. MEMORY DEVICE AND STORAGE DEVICE simplified abstract (SK hynix Inc.)
- 18454144. SETTING OPTIMAL THRESHOLD VOLTAGES FOR READING DATA FROM A MEMORY DEVICE BASED ON A CHANNEL DISTRIBUTION (SAMSUNG ELECTRONICS CO., LTD.)
- 18455575. MEMORY SYSTEM HAVING A NON-VOLATILE MEMORY AND A CONTROLLER CONFIGURED TO SWITCH A MODE FOR CONTROLLING AN ACCESS OPERATION TO THE NON-VOLATILE MEMORY simplified abstract (Kioxia Corporation)
- 18460516. MEMORY CONTROLLER, MEMORY CONTROLLER CONTROL METHOD, AND MEMORY SYSTEM simplified abstract (Kioxia Corporation)
- 18464058. MEMORY DEVICE FOR INDIVIDUALLY APPLYING VOLTAGE TO DRAIN SELECT LINES simplified abstract (SK hynix Inc.)
- 18464383. METHOD OF PROGRAMMING DATA IN NONVOLATILE MEMORY DEVICE AND NONVOLATILE MEMORY DEVICE PERFORMING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18465541. METHOD OF OPERATING MEMORY DEVICE AND MEMORY DEVICE PERFORMING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18468349. NON-VOLATILE MEMORY WITH EFFICIENT PRECHARGE IN SUB-BLOCK MODE (Western Digital Technologies, Inc.)
- 18471430. DEVICE PROVIDING IMPROVED FAIL BIT COUNT OPERATION simplified abstract (Samsung Electronics Co., Ltd.)
- 18485040. PAGE BUFFER, SEMICONDUCTOR DEVICE INCLUDING THE PAGE BUFFER, AND OPERATING METHOD OF THE SEMICONDUCTOR DEVICE (SK hynix Inc.)
- 18485353. MEMORY DEVICE AND MEMORY DEVICE OPERATING METHOD simplified abstract (Samsung Electronics Co., Ltd.)
- 18491966. NON-VOLATILE MEMORY DEVICE AND PROGRAMMING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18494768. MEMORY DEVICE FOR PERFORMING CHANNEL PRECHARGE OPERATION AND METHOD FOR OPERATING THE SAME (SK hynix Inc.)
- 18494769. MEMORY DEVICE PERMITTING OVERWRITE PROGRAM OPERATION AND OPERATION METHOD THEREOF (SK hynix Inc.)
- 18505983. MEMORY DEVICE FOR INPUTTING AND OUTPUTTING DATA AND A MEMORY SYSTEM INCLUDING THE MEMORY DEVICE AND A MEMORY CONTROLLER (SK hynix Inc.)
- 18512279. NONVOLATILE MEMORY DEVICES AND METHODS OF CONTROLLING ERASE OPERATIONS OF NONVOLATILE MEMORY DEVICES (SAMSUNG ELECTRONICS CO., LTD.)
- 18512746. NON-VOLATILE MEMORY DEVICE AND OPERATING METHOD THEREOF simplified abstract (Samsung Electronics Co., Ltd.)
- 18515848. MEMORY DEVICE PRE-CHARGING COMMON SOURCE LINE AND OPERATING METHOD OF THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18517541. CONTROLLING ERASE-TO-PROGRAM DELAY FOR IMPROVING DATA RETENTION simplified abstract (Micron Technology, Inc.)
- 18522343. MEMORY SYSTEM simplified abstract (Kioxia Corporation)
- 18522829. NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18524721. MANAGING ASYNCHRONOUS POWER LOSS IN A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
- 18527978. NAND DATA PLACEMENT SCHEMA simplified abstract (Micron Technology, Inc.)
- 18531563. METHOD OF OPERATING A MEMORY CONTROLLER, MEMORY CONTROLLER, AND MEMORY SYSTEM (Yangtze Memory Technologies Co., Ltd.)
- 18537344. MEMORY DEVICE AND OPERATING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18542128. METHOD OF OPERATING MEMORY, MEMORY, AND MEMORY SYSTEM (Yangtze Memory Technologies Co., Ltd.)
- 18544032. MEMORY DEVICES AND OPERATING METHODS THEREOF, MEMORY SYSTEMS (Yangtze Memory Technologies Co., Ltd.)
- 18545888. ENHANCED GRADIENT SEEDING SCHEME DURING A PROGRAM OPERATION IN A MEMORY SUB-SYSTEM simplified abstract (Micron Technology, Inc.)
- 18581018. NONVOLATILE MEMORY DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18582390. NONVOLATILE MEMORY DEVICE, OPERATING METHOD THEREOF, AND MEMORY SYSTEM INCLUDING THE SAME simplified abstract (SK Hynix Inc.)
- 18583632. MEMORY DEVICE RELATED TO PERFORMING A PROGRAM OPERATION ON MEMORY CELLS simplified abstract (SK hynix Inc.)
- 18591728. SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18593570. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18593979. SEMICONDUCTOR DEVICE simplified abstract (Kioxia Corporation)
- 18593980. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18596412. MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
- 18596541. MEMORY DEVICE AND METHOD simplified abstract (Kioxia Corporation)
- 18598793. SEMICONDUCTOR MEMORY DEVICES WITH DIELECTRIC FIN STRUCTURES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18598988. STORAGE DEVICE AND OPERATING METHOD THEREOF (Samsung Electronics Co., Ltd.)
- 18601810. STORING ONE DATA VALUE BY PROGRAMMING A FIRST MEMORY CELL AND A SECOND MEMORY CELL simplified abstract (Micron Technology, Inc.)
- 18602974. SUB-BLOCK DEFINITION IN A MEMORY DEVICE USING SEGMENTED SOURCE PLATES simplified abstract (Micron Technology, Inc.)
- 18604200. CREATING SEGMENTED SOURCE PLATES FOR SUB-BLOCK DEFINITION IN A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
- 18604411. BOOST-BY-DECK DURING A PROGRAM OPERATION ON A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
- 18604858. MULTI-PROGRAM OF MEMORY CELLS WITHOUT INTERVENING ERASE OPERATIONS simplified abstract (MICRON TECHNOLOGY, INC.)
- 18605169. RE-DRIVING DATA TO A SUB-BLOCK DURING PROGRAMMING OF MULTIPLE SUB-BLOCKS simplified abstract (Micron Technology, Inc.)
- 18610282. SEMICONDUCTOR MEMORY simplified abstract (Kioxia Corporation)
- 18612239. NONVOLATILE SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18613222. SEMICONDUCTOR DEVICE simplified abstract (SEMICONDUCTOR ENERGY LABORATORY CO., LTD.)
- 18625800. CONTROLLING PILLAR VOLTAGE USING WORDLINE BOOST VOLTAGE AND SELECT GATE LEAKAGE DURING ALL LEVELS PROGRAMMING OF A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
- 18628483. SENSE AMPLIFIER CONTROL simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18632972. MEMORY DEVICE FOR PERFORMING A PROGRAM OPERATION AND AN OPERATING METHOD OF THE MEMORY DEVICE (SK hynix Inc.)
- 18636569. MEMORY DEVICE AND PROGRAM OPERATION THEREOF simplified abstract (Yangtze Memory Technologies Co., LTD.)
- 18637474. SEMICONDUCTOR MEMORY DEVICE (Kioxia Corporation)
- 18645697. MEMORY SYSTEM STORING MANAGEMENT INFORMATION AND METHOD OF CONTROLLING SAME simplified abstract (Kioxia Corporation)
- 18649582. HYBRID PARALLEL PROGRAMMING OF SINGLE-LEVEL CELL MEMORY simplified abstract (Micron Technology, Inc.)
- 18653241. MEMORY SYSTEM simplified abstract (Kioxia Corporation)
- 18657672. READ DISTURB MITIGATION BASED ON SIGNAL AND NOISE CHARACTERISTICS OF MEMORY CELLS COLLECTED FOR READ CALIBRATION simplified abstract (Micron Technology, Inc.)
- 18662238. SEMICONDUCTOR MEMORY simplified abstract (KIOXIA CORPORATION)
- 18662681. STORAGE CONTROLLER AND STORAGE DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18662971. SEMICONDUCTOR MEMORY DEVICE simplified abstract (KIOXIA CORPORATION)
- 18666063. PROGRAMMING DELAY SCHEME FOR IN A MEMORY SUB-SYSTEM BASED ON MEMORY RELIABILITY simplified abstract (Micron Technology, Inc.)
- 18668021. ONE-LADDER READ OF MEMORY CELLS COARSELY PROGRAMMED VIA INTERLEAVED TWO-PASS DATA PROGRAMMING TECHNIQUES simplified abstract (Micron Technology, Inc.)
- 18670778. MEMORY MODULES INCLUDING A MIRRORING CIRCUIT AND METHODS OF OPERATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18671649. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18671835. TRACKING RC TIME CONSTANT BY WORDLINE IN MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 18672640. ERROR AVOIDANCE FOR PARTIALLY PROGRAMMED BLOCKS OF A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
- 18675257. MEMORY SYSTEM AND MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18677536. BLOCK SELECTION CIRCUIT CONTROLLING SERIES CONNECTED PASS TRANSISTORS AND FLASH MEMORY INCLUDING THE SAME (SAMSUNG ELECTRONICS CO., LTD.)
- 18677727. MEMORY SYSTEM, CONTROL METHOD THEREOF, AND PROGRAM simplified abstract (Kioxia Corporation)
- 18679914. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
- 18725991. METHOD FOR OPERATING FERROELECTRIC-BASED THREE-DIMENSIONAL FLASH MEMORY INCLUDING DATA STORAGE PATTERN (Samsung Electronics Co., Ltd.)
- 18732188. SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM simplified abstract (Kioxia Corporation)
