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Category:G11C16/04
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Pages in category "G11C16/04"
The following 200 pages are in this category, out of 733 total.
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- 17461278. THREE-DIMENSIONAL ONE TIME PROGRAMMABLE MEMORY simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17690154. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO.,LTD.)
- 17693571. NONVOLATILE MEMORY DEVICE AND METHOD OF DETECTING WORDLINE DEFECT OF THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17697386. NON-VOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17706097. NONVOLATILE MEMORY AND STORAGE DEVICE INCLUDING SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17709910. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17712238. SEMICONDUCTOR MEMORY DEVICE AND STORAGE SYSTEM INCLUDING SEMICONDUCTOR MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17742879. NON-VOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17744942. SEMICONDUCTOR DEVICE PERFORMING BLOCK PROGRAM AND OPERATING METHOD THEREOF simplified abstract (Samsung Electronics Co., Ltd.)
- 17750315. NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING NONVOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17806103. NONVOLATILE MEMORY DEVICE AND STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17810067. STORAGE DEVICE AND OPERATING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17816651. VERTICAL NON-VOLATILE MEMORY WITH LOW RESISTANCE SOURCE CONTACT simplified abstract (Micron Technology, Inc.)
- 17817408. MEMORY DEVICE AND PROGRAM METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17820280. NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING NONVOLATILE MEMORY simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17825764. NON-VOLATILE MEMORY DEVICE AND METHOD OF OPERATING NONVOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17830677. STORAGE DEVICE AND OPERATING METHOD OF STORAGE DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17847948. STORAGE CONTROLLER AND STORAGE DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17851865. Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells simplified abstract (Micron Technology, Inc.)
- 17854163. MEMORY DEVICE, METHOD OF OPERATING THE SAME, AND METHOD OF OPERATING STORAGE DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17860711. MANAGING PROGRAM VERIFY VOLTAGE OFFSETS FOR CHARGE COUPLING AND LATERAL MIGRATION COMPENSATION IN MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 17861573. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17863317. SELECTIVE CAVITY MERGING FOR ISOLATION REGIONS IN A MEMORY DIE simplified abstract (Micron Technology, Inc.)
- 17866904. NONVOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17868900. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17871358. NONVOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17876694. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17881039. MEMORY DEVICE INCLUDING VERTICAL CHANNEL STRUCTURE simplified abstract (Samsung Electronics Co., Ltd.)
- 17881352. MEMORY DEVICE FOR CONTROLLING WORD LINE VOLTAGE AND OPERATING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17896775. Memory Circuitry And Method Used In Forming Memory Circuitry simplified abstract (Micron Technology, Inc.)
- 17897184. PADDING IN FLASH MEMORY BLOCKS simplified abstract (Micron Technology, Inc.)
- 17897448. DISCHARGE CIRCUITS simplified abstract (Micron Technology, Inc.)
- 17897460. Memory Circuitry And Method Used In Forming Memory Circuitry simplified abstract (Micron Technology, Inc.)
- 17897976. ELECTRONIC DEVICES COMPRISING A STEPPED PILLAR REGION, AND RELATED METHODS simplified abstract (Micron Technology, Inc.)
- 17898604. MEMORY DEVICES INCLUDING LOGIC NON-VOLATILE MEMORY simplified abstract (Micron Technology, Inc.)
- 17898827. SELF-SUPPORTING SGD STADIUM simplified abstract (Micron Technology, Inc.)
- 17935122. STORAGE DEVICE USING WAFER-TO-WAFER BONDING AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17935502. NONVOLATILE MEMORY DEVICE HAVING CELL-OVER-PERIPHERY (COP) STRUCTURE WITH ADDRESS RE-MAPPING simplified abstract (SAMSUNG ELECTRONICS CO.,LTD.)
- 17951337. SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17954757. CONFIGURABLE CAPACITORS WITH 3D NON-VOLATILE ARRAY simplified abstract (Western Digital Technologies, Inc.)
- 17958386. NONVOLATILE MEMORY DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 17960346. NON-VOLATILE MEMORY DEVICE AND PROGRAMMING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17970764. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17971443. Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells simplified abstract (Micron Technology, Inc.)
- 17972224. MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
- 18058555. NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18064635. NONVOLATILE MEMORY DEVICE AND METHOD OF PROGRAMMING IN THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18088046. NONVOLATILE MEMORY DEVICE AND OPERATION METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18090087. THREE-DIMENSIONAL NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Yangtze Memory Technologies Co., Ltd.)
- 18091174. OPERATION METHOD OF MEMORY SYSTEM, MEMORY SYSTEM AND ELECTRONIC DEVICE simplified abstract (Yangtze Memory Technologies Co., Ltd.)
- 18095336. THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF simplified abstract (Yangtze Memory Technologies Co., Ltd.)
- 18103754. NON-VOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME AND PROGRAM METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18124407. TRACKING AND UPDATING READ COMMAND VOLTAGE THRESHOLDS IN SOLID-STATE DRIVES simplified abstract (Kioxia Corporation)
- 18148579. NONVOLATILE MEMORY DEVICE PROVIDING INPUT/OUTPUT COMPATIBILITY AND METHOD FOR SETTING COMPATIBILITY THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18149206. MEMORY DEVICES HAVING CELL OVER PERIPHERY STRUCTURE, MEMORY PACKAGES INCLUDING THE SAME, AND METHODS OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18149302. MEMORY DEVICE FOR COLUMN REPAIR simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18151734. AUTOMATIC PROGRAM VOLTAGE SELECTION NETWORK simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18172308. MEMORY DEVICE simplified abstract (MACRONIX INTERNATIONAL CO., LTD.)
- 18176347. FLASH MEMORY DEVICE FOR ADJUSTING TRIP VOLTAGE USING VOLTAGE REGULATOR AND SENSING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18177704. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18177877. MEMORY SYSTEM AND METHOD FOR CONTROLLING SEMICONDUCTOR MEMORY simplified abstract (Kioxia Corporation)
- 18190398. SEMICONDUCTOR DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18197258. MEMORY DEVICE INCLUDING PAGE BUFFER CIRCUIT simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18197283. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18202061. MEMORY DEVICE INCLUDING SOURCE STRUCTURE HAVING CONDUCTIVE ISLANDS OF DIFFERENT WIDTHS simplified abstract (Micron Technology, Inc.)
- 18203223. OUT-OF-ORDER PROGRAMMING OF FIRST WORDLINE IN A PHYSICAL UNIT OF A MEMORY DEVICE simplified abstract (MICRON TECHNOLOGY, INC.)
- 18205835. MEMORY DEVICE AND OPERATION THEREOF simplified abstract (YANGTZE MEMORY TECHNOLOGIES CO., LTD.)
- 18207979. OPERATION METHOD OF MEMORY DEVICE INCLUDING MEMORY BLOCK CONNECTED TO WORDLINES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18215320. NON-VOLATILE MEMORY DEVICE, STORAGE DEVICE, OPERATING METHOD OF STORAGE CONTROLLER, AND OPERATING METHOD OF THE STORAGE DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18215533. VERTICAL NAND FLASH MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18225735. LOOP DEPENDENT BIT LINE AND READ BIASES IN A MEMORY DEVICE simplified abstract (WESTERN DIGITAL TECHNOLOGIES, INC.)
- 18229705. READ POWER SAVINGS BY TEMPORARILY DISABLING BITLINE VOLTAGE (Western Digital Technologies, Inc.)
- 18230270. OPEN BLOCK DETECTION METHOD USING FOR FIRST AND SECOND TIME PERIOD READ TIME VALLEY FOR NON-VOLATILE MEMORY APPARATUS (Western Digital Technologies, Inc.)
- 18231127. MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
- 18232609. VPASS AUTO LAYER COMPENSATION IN A MEMORY DEVICE (Western Digital Technologies, Inc.)
- 18234046. MEMORY ARRAY STRUCTURES AND METHODS OF THEIR FABRICATION simplified abstract (Micron Technology, Inc.)
- 18234429. MEMORY DEVICES WITH A LOWER EFFECTIVE PROGRAM VERIFY LEVEL simplified abstract (Micron Technology, Inc.)
- 18235183. ERASE PULSE LOOP DEPENDENT ADJUSTMENT OF SELECT GATE ERASE BIAS VOLTAGE simplified abstract (Micron Technology, Inc.)
- 18237070. INTERLEAVED STRING DRIVERS, STRING DRIVER WITH NARROW ACTIVE REGION, AND GATED LDD STRING DRIVER simplified abstract (Micron Technology, Inc.)
- 18237787. Threshold Voltage Reduction in Memristive Devices (International Business Machines Corporation)
- 18237815. DYNAMIC LATCHES ABOVE A THREE-DIMENSIONAL NON-VOLATILE MEMORY ARRAY simplified abstract (Micron Technology, Inc.)
- 18239140. SEMICONDUCTOR MEMORY DEVICE HAVING MEMORY CHIP BONDED TO A CMOS CHIP INCLUDING A PERIPHERAL CIRCUIT simplified abstract (Kioxia Corporation)
- 18239193. MEMORY DEVICES WITH PROGRAM VERIFY LEVELS BASED ON COMPENSATION VALUES simplified abstract (Micron Technology, Inc.)
- 18239480. NONVOLATILE MEMORY DEVICE, STORAGE DEVICE INCLUDING THE SAME, AND METHOD OF OPERATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18239504. SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEMS INCLUDING A SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18239589. DATA FLIP-FLOP CIRCUIT OF NONVOLATILE MEMORY DEVICE AND NONVOLATILE MEMORY DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18240560. STAIRLESS THREE-DIMENSIONAL MEMORY DEVICE CONTAINING MEANDERING DIELECTRIC ISOLATION STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (SanDisk Technologies LLC)
- 18296373. SEMICONDUCTOR DEVICE AND OPERATING METHOD OF SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
- 18296828. SEMICONDUCTOR DEVICE RELATED TO PERFORMANCE OF A PROGRAM OPERATION AND METHOD OF OPERATING THE SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
- 18299714. SEMICONDUCTOR DEVICE CAPABLE OF CHECKING DETERIORATION OF SELECT TRANSISTOR AND OPERATING METHOD THEREOF simplified abstract (SK hynix Inc.)
- 18300958. MEMORY DEVICE FOR PERFORMING FOGGY-FINE PROGRAM OPERATION AND METHOD OF OPERATING THE MEMORY DEVICE simplified abstract (SK hynix Inc.)
- 18301575. VERTICAL MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18302728. MEMORY DEVICE AND METHOD OF OPERATING THE MEMORY DEVICE simplified abstract (SK hynix Inc.)
- 18306654. MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18310290. SEMICONDUCTOR DEVICE FOR PROGRAMMING OR ERASING SELECT TRANSISTORS AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
- 18317362. MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
- 18318725. MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
- 18321001. MEMORY DEVICE INCLUDING THREE DIMENSIONAL ARRAY STRUCTURE AND OPERATING METHOD THEREOF simplified abstract (SK hynix Inc.)
- 18323306. MEMORY DEVICE AND METHOD OF OPERATING THE MEMORY DEVICE simplified abstract (SK hynix Inc.)
- 18323999. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
- 18326024. MEMORY INCLUDING MEMORY CELLS HAVING DIFFERENT SIZES simplified abstract (SK hynix Inc.)
- 18326781. MEMORY DEVICE AND OPERATING METHOD OF THE MEMORY DEVICE simplified abstract (SK hynix Inc.)
- 18327846. METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS simplified abstract (Micron Technology, Inc.)
- 18328192. NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18330120. MEMORY SYSTEM, MEMORY AND MEMORY CONTROL METHOD simplified abstract (YANGTZE MEMORY TECHNOLOGIES CO., LTD.)
- 18331689. MEMORY DEVICE PERFORMING PROGRAM OPERATION AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
- 18331821. SEMICONDUCTOR MEMORY DEVICE simplified abstract (SK hynix Inc.)
- 18333366. MEMORY DEVICE AND OPERATING METHOD THEREOF simplified abstract (SK hynix Inc.)
- 18335492. VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRINGS simplified abstract (Samsung Electronics Co., Ltd.)
- 18335680. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18337307. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE simplified abstract (SK hynix Inc.)
- 18337605. SEMICONDUCTOR STORAGE DEVICE simplified abstract (Kioxia Corporation)
- 18338757. MEMORY DEVICE INCLUDING VERTICALLY STACKED PERIPHERAL REGIONS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18339069. MEMORY PERFORMING RESET OPERATION AND OPERATING METHOD THEREOF simplified abstract (SK hynix Inc.)
- 18340419. MEMORY DEVICES INCLUDING VERTICAL STACK STRUCTURE, METHODS OF MANUFACTURING AND OPERATING THE SAME, AND ELECTRONIC APPARATUSES INCLUDING MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18345839. SEMICONDUCTOR MEMORY DEVICE simplified abstract (SK hynix Inc.)
- 18349578. STAIRLESS THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF BY FORMING REPLACEMENT WORD LINES THROUGH MEMORY OPENINGS simplified abstract (SanDisk Technologies LLC)
- 18350524. THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF USING ETCH STOP STRUCTURES LOCATED BETWEEN TIERS simplified abstract (SanDisk Technologies LLC)
- 18351205. THREE-DIMENSIONAL MEMORY DEVICE CONTAINING ENGINEERED CHARGE STORAGE ELEMENTS AND METHODS FOR FORMING THE SAME simplified abstract (SanDisk Technologies LLC)
- 18352963. MEMORY DEVICE AND OPERATING METHOD THEREOF simplified abstract (SK hynix Inc.)
- 18354269. STAIRLESS THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THE SAME BY FORMING REPLACEMENT WORD LINES simplified abstract (SanDisk Technologies LLC)
- 18356324. SEMICONDUCTOR DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18356951. SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING SPLIT SELECTION LINES AND METHOD OF MANUFACTURING THE SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE simplified abstract (SK hynix Inc.)
- 18357407. VERTICAL NON-VOLATILE MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18357436. NON-VOLATILE MEMORY WITH ADAPTIVE DUMMY WORD LINE BIAS simplified abstract (SanDisk Technologies LLC)
- 18357489. NON-VOLATILE MEMORY WITH LOWER CURRENT PROGRAM-VERIFY simplified abstract (SanDisk Technologies LLC)
- 18358702. THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF INCLUDING EXPANDED SUPPORT OPENINGS AND DOUBLE SPACER WORD LINE CONTACT FORMATION simplified abstract (SanDisk Technologies LLC)
- 18364240. SYNAPSE DEVICE, MANUFACTURING METHOD THEREOF, AND NEUROMORPHIC DEVICE INCLUDING SYNAPSE DEVICE simplified abstract (Korea Advanced Institute of Science and Technology)
- 18364240. SYNAPSE DEVICE, MANUFACTURING METHOD THEREOF, AND NEUROMORPHIC DEVICE INCLUDING SYNAPSE DEVICE simplified abstract (SK Hynix Inc.)
- 18364397. MICROELECTRONIC DEVICES WITH MIRRORED BLOCKS OF MULTI-SET STAIRCASED STADIUMS, AND RELATED SYSTEMS AND METHODS simplified abstract (Micron Technology, Inc.)
- 18366368. FLASH MEMORY FOR ADJUSTING TRIP VOLTAGE USING VOLTAGE REGULATOR AND SAMPLING SWITCH CIRCUIT AND SENSING METHOD THEREOF simplified abstract (Samsung Electronics Co., Ltd.)
- 18367075. NON-VOLATILE 3D MEMORY SEARCH ARCHITECTURE (Macronix International Co., Ltd.)
- 18367619. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18368951. BIT LINE TIMING BASED CELL TRACKING QUICK PASS WRITE FOR PROGRAMMING NON-VOLATILE MEMORY APPARATUSES (Western Digital Technologies, Inc.)
- 18369028. THRESHOLD VOLTAGE BUDGET BY EMPLOYING AN OXIDE-NITRIDE PITCH DEPENDENT THRESHOLD VOLTAGE WINDOW (Western Digital Technologies, Inc.)
- 18372949. STORAGE DEVICE AND STORAGE SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18374717. OPERATING METHOD OF A NONVOLATILE MEMORY DEVICE FOR PROGRAMMING MULTI-PAGE DATA simplified abstract (Samsung Electronics Co., Ltd.)
- 18375173. SEMICONDUCTOR MEMORY DEVICES AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18378540. MEMORY DEVICE THAT PERFORMS ERASE OPERATION TO PRESERVE DATA RELIABILITY simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18383603. MEMORY DEVICE AND METHOD OF FABRICATING MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18386472. MEMORY DEVICE HAVING ASYMMETRIC PAGE BUFFER ARRAY ARCHITECTURE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18388032. VOLATILE DATA STORAGE IN NAND MEMORY simplified abstract (Micron Technology, Inc.)
- 18390258. VERTICAL TYPE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18392161. Matrix-Vector Multiplications Based on Charge-Summing Memory Cell Strings simplified abstract (IMEC VZW)
- 18396813. SEMICONDUCTOR DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18400049. NON-VOLATILE MEMORY DEVICE AND RECOVERY METHOD OF NON-VOLATILE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18403115. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18403944. SEMICONDUCTOR STORAGE DEVICE simplified abstract (Kioxia Corporation)
- 18404742. ARCHITECTURE AND METHOD FOR NAND MEMORY OPERATION simplified abstract (Yangtze Memory Technologies Co., Ltd.)
- 18405049. ELONGATED CAPACITORS IN 3D NAND MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 18408680. SEMICONDUCTOR DEVICE simplified abstract (Kioxia Corporation)
- 18408923. MEMORY DEVICE AND OPERATION METHOD THEREOF, MEMORY SYSTEM, AND STORAGE MEDIUM (Yangtze Memory Technologies Co., Ltd.)
- 18409344. MEMORY DEVICE INCLUDING STRING SELECT TRANSISTORS HAVING DIFFERENT THRESHOLD VOLTAGES AND METHOD OF OPERATING THE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18411348. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SEMICONDUCTOR MEMORY DEVICE (SK hynix Inc.)
- 18420074. CHOPLESS FLOW FOR STAIRLESS ELECTRICAL INTERCONNECT STRUCTURE simplified abstract (Micron Technology, Inc.)
- 18423047. MEMORY SYSTEM AND OPERATING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18423174. MEMORY DEVICE FOR SUMMATION OF OUTPUTS OF SIGNED MULTIPLICATIONS simplified abstract (Micron Technology, Inc.)
- 18423178. MEMORY DEVICE FOR SIGNED MULTI-BIT TO MULTI-BIT MULTIPLICATIONS simplified abstract (Micron Technology, Inc.)
- 18423181. MEMORY DEVICE FOR MULTIPLICATION USING MEMORY CELLS WITH DIFFERENT THRESHOLDS BASED ON BIT SIGNIFICANCE simplified abstract (Micron Technology, Inc.)
- 18427720. MICROELECTRONIC DEVICES INCLUDING CONTACT STRUCTURES, AND RELATED ELECTRONIC SYSTEMS AND METHODS simplified abstract (Micron Technology, Inc.)
- 18428275. MEMORY DEVICE AND OPERATING METHOD OF THE MEMORY DEVICE (SK hynix Inc.)
- 18438636. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18441331. NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF NONVOLATILE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18443463. NONVOLATILE MEMORY DEVICES AND MEMORY PACKAGES INCLUDING THE SAME (Samsung Electronics Co., Ltd.)
- 18444848. MEMORY SYSTEM, OPERATING METHOD OF THE MEMORY SYSTEM, AND INTERFACE CIRCUIT OF THE MEMORY SYSTEM simplified abstract (Samsung Electronics Co., Ltd.)
- 18450607. MEMORY SYSTEM AND NON-VOLATILE MEMORY simplified abstract (Kioxia Corporation)
- 18450969. SEMICONDUCTOR MEMORY DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18451104. SEMICONDUCTOR MEMORY DEVICE FOR PERFORMING PROGRAM OPERATION simplified abstract (SK hynix Inc.)
- 18452573. MEMORY DEVICE AND STORAGE DEVICE simplified abstract (SK hynix Inc.)
- 18458071. SEMICONDUCTOR STORAGE DEVICE simplified abstract (Kioxia Corporation)
- 18459745. STORAGE DEVICE simplified abstract (Kioxia Corporation)
- 18459962. NONVOLATILE SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD THEREFOR simplified abstract (Kioxia Corporation)
- 18460030. DATA LATCH CIRCUIT, SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR STORAGE DEVICE simplified abstract (Kioxia Corporation)
- 18460203. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18460516. MEMORY CONTROLLER, MEMORY CONTROLLER CONTROL METHOD, AND MEMORY SYSTEM simplified abstract (Kioxia Corporation)
- 18462390. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18462433. MEMORY DEVICE FOR PERFORMING ERASE VERIFY OPERATION ON CELL STRING GROUP BASIS AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
- 18464058. MEMORY DEVICE FOR INDIVIDUALLY APPLYING VOLTAGE TO DRAIN SELECT LINES simplified abstract (SK hynix Inc.)
- 18464348. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18464383. METHOD OF PROGRAMMING DATA IN NONVOLATILE MEMORY DEVICE AND NONVOLATILE MEMORY DEVICE PERFORMING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18467005. DATA PATH OSCILLATOR MISMATCH ERROR REDUCTION FOR NON-VOLATILE MEMORY (Western Digital Technologies, Inc.)
- 18468345. NONVOLATILE MEMORY DEVICES AND METHODS OF OPERATING THE NONVOLATILE MEMORY DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18468349. NON-VOLATILE MEMORY WITH EFFICIENT PRECHARGE IN SUB-BLOCK MODE (Western Digital Technologies, Inc.)
- 18470931. MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18471430. DEVICE PROVIDING IMPROVED FAIL BIT COUNT OPERATION simplified abstract (Samsung Electronics Co., Ltd.)
- 18471746. SEMICONDUCTOR MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18475784. SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18481404. NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18485040. PAGE BUFFER, SEMICONDUCTOR DEVICE INCLUDING THE PAGE BUFFER, AND OPERATING METHOD OF THE SEMICONDUCTOR DEVICE (SK hynix Inc.)
- 18489454. VOLTAGE REGULATOR SUPPLY FOR INDEPENDENT WORDLINE READS simplified abstract (Micron Technology, Inc.)
- 18491966. NON-VOLATILE MEMORY DEVICE AND PROGRAMMING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18498673. INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18502563. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18505983. MEMORY DEVICE FOR INPUTTING AND OUTPUTTING DATA AND A MEMORY SYSTEM INCLUDING THE MEMORY DEVICE AND A MEMORY CONTROLLER (SK hynix Inc.)
- 18506899. MEMORY DEVICE AND METHOD OF OPERATING MEMORY DEVICE (SK hynix Inc.)
- 18509250. MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18511396. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM COMPRISING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18512279. NONVOLATILE MEMORY DEVICES AND METHODS OF CONTROLLING ERASE OPERATIONS OF NONVOLATILE MEMORY DEVICES (SAMSUNG ELECTRONICS CO., LTD.)
- 18513430. MICROELECTRONIC DEVICES INCLUDING STADIUM STRUCTURES, AND RELATED MEMORY DEVICES AND ELECTRONIC SYSTEMS simplified abstract (Micron Technology, Inc.)
- 18514158. NAND FLASH DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
