There is currently no text in this page. You can search for this page title in other pages, or search the related logs, but you do not have permission to create this page.
Category:G11C11/16
Jump to navigation
Jump to search
(previous page) (next page)
Subcategories
This category has the following 27 subcategories, out of 27 total.
C
E
F
G
H
J
K
M
N
P
S
T
V
Y
Z
Pages in category "G11C11/16"
The following 200 pages are in this category, out of 260 total.
(previous page) (next page)1
- 17456088. Memory Device with Spin-Harvesting Structure simplified abstract (International Business Machines Corporation)
- 17457565. TOP ELECTRODE TO METAL LINE CONNECTION FOR MAGNETO-RESISTIVE RANDOM-ACCESS MEMORY STACK HEIGHT REDUCTION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17526646. MRAM STRUCTURE WITH ENHANCED MAGNETICS USING SEED ENGINEERING simplified abstract (International Business Machines Corporation)
- 17534485. MAGNETORESISTIVE RANDOM-ACCESS MEMORY (MRAM) WITH PRESERVED UNDERLYING DIELECTRIC LAYER simplified abstract (International Business Machines Corporation)
- 17541401. DIELECTRIC FILL FOR TIGHT PITCH MRAM PILLAR ARRAY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17542696. SUBTRACTIVE TOP VIA AS A BOTTOM ELECTRODE CONTACT FOR AN EMBEDDED MEMORY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17550464. PARAMAGNETIC HEXAGONAL METAL PHASE COUPLING SPACER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17577040. MEMORY DEVICES, CIRCUITS AND METHODS OF ADJUSTING A SENSING CURRENT FOR THE MEMORY DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17644349. MODIFIED TOP ELECTRODE CONTACT FOR MRAM EMBEDDING IN ADVANCED LOGIC NODES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17688196. MAGNETIC TUNNEL JUNCTION INCLUDING HEXAGONAL MULTI-LAYERED STRUCTURE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17688196. MAGNETIC TUNNEL JUNCTION INCLUDING HEXAGONAL MULTI-LAYERED STRUCTURE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17690728. BIT-LINE RESISTANCE REDUCTION simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17723845. MAGNETIC MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17736652. MEMORY DEVICE AND FORMATION METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17751898. MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17806594. SIMULTANEOUS ELECTRODES FOR MAGNETO-RESISTIVE RANDOM ACCESS MEMORY DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17808561. MRAM DEVICE WITH SELF-ALIGNED BOTTOM ELECTRODES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17814057. SEMICONDUCTOR MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17834074. PROCESSING APPARATUSES INCLUDING MAGNETIC RESISTORS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17870545. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17894554. MEMORY DEVICE INCLUDING MERGED WRITE DRIVER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17931464. MAGNETORESISTIVE RANDOM ACCESS MEMORY WITH DATA SCRUBBING simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17932691. MRAM TOP ELECTRODE STRUCTURE WITH LINER LAYER simplified abstract (International Business Machines Corporation)
- 17945738. MAGNETO RESISTIVE ELEMENT simplified abstract (TDK Corporation)
- 17956938. SPIN-ORBIT-TORQUE (SOT) MRAM WITH DOUBLED LAYER OF SOT METAL simplified abstract (International Business Machines Corporation)
- 17970788. MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17981734. Dual Magnetic Tunnel Junction Devices For Magnetic Random Access Memory (Mram) simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18047820. INSPECTION DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18048455. MRAM DEVICE WITH OCTAGON PROFILE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18051857. MAGNETIC MEMORY DEVICES AND METHODS FOR INITIALIZING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18063710. MRAM DEVICE WITH HAMMERHEAD PROFILE simplified abstract (International Business Machines Corporation)
- 18064261. REACTIVE SERIAL RESISTANCE REDUCTION FOR MAGNETORESISTIVE RANDOM-ACCESS MEMORY DEVICES simplified abstract (International Business Machines Corporation)
- 18064367. MAGNETIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18116835. PERPENDICULAR SHAPE ANISOTROPY DESIGN WITH ASYMMETRIC COMPOSITE FREE LAYER simplified abstract (Samsung Electronics Co., Ltd.)
- 18116836. PERPENDICULAR SHAPE ANISOTROPY DESIGN WITH DUAL SPIN FILTERING simplified abstract (Samsung Electronics Co., Ltd.)
- 18116839. PERPENDICULAR SHAPE ANISOTROPY DESIGN WITH REDUCED AEX simplified abstract (Samsung Electronics Co., Ltd.)
- 18135717. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (UNITED MICROELECTRONICS CORP.)
- 18146255. MAGNETIC RANDOM ACCESS MEMORY STRUCTURE simplified abstract (INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE)
- 18148240. CHIRAL COUPLING-BASED VALLEYTRONIC MAGNETOELECTRIC SPIN-ORBIT DEVICES simplified abstract (Intel Corporation)
- 18148392. RELAXED PITCH BACKSIDE MAGNETO-RESISTIVE RANDOM ACCESS MEMORY INTEGRATION WITH SELF-ALIGNED MICRO STUD AND BACKSIDE POWER DISTRIBUTION NETWORK simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18158086. Highly Physical Ion Resistive Spacer To Define Chemical Damage Free Sub 60nm Mram Devices simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18164845. MAGNETIC TUNNEL JUNCTION (MTJ) HAVING A DIFFUSION BLOCKING SPACER LAYER simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18170925. MULTI-RAIL SENSE CIRCUIT WITH PRE-CHARGE TRANSISTORS AND MEMORY CIRCUIT INCORPORATING THE SENSE CIRCUIT simplified abstract (GlobalFoundries U.S. Inc.)
- 18185961. MULTILAYERED VERTICAL SPIN-ORBIT TORQUE DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18251701. SEMICONDUCTOR STORAGE APPARATUS simplified abstract (SONY SEMICONDUCTOR SOLUTIONS CORPORATION)
- 18295276. CANTILEVER NANOELECTROMECHANICAL DECODER CIRCUIT AND METHODS FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED)
- 18348087. FE-X TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS ON TOP OF A TUNNEL BARRIER simplified abstract (International Business Machines Corporation)
- 18348087. FE-X TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS ON TOP OF A TUNNEL BARRIER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18364674. Magnetoresistive Random-Access Memory (MRAM) Cell and Method of Operation Thereof simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18384404. MAGNETORESISTIVE RANDOM ACCESS DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18434752. MEMORY DEVICES, CIRCUITS AND METHODS OF ADJUSTING A SENSING CURRENT FOR THE MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18447856. Memory Device With Source Lines in Parallel simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18459823. MAGNETIC TUNNELING JUNCTION DEVICE CAPABLE OF MAGNETIC SWITCHING WITHOUT EXTERNAL MAGNETIC FIELD AND MEMORY DEVICE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18463418. MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18464350. MAGNETIC MEMORY simplified abstract (Kioxia Corporation)
- 18466004. MAGNETIC TUNNEL JUNCTION (MTJ) STRUCTURE AND MEMORY CELL (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18466727. MAGNETIC MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18484466. MEMORY DEVICE AND SEMICONDUCTOR DIE, AND METHOD OF FABRICATING MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18505152. MAGNETIC MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18519085. MRAM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18520427. MRAM DEVICE STRUCTURES AND METHODS OF FABRICATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18545626. MEMORY DEVICE WHICH GENERATES IMPROVED WRITE VOLTAGE ACCORDING TO SIZE OF MEMORY CELL simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18593293. MAGNETIC MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18594104. MEMORY SYSTEM simplified abstract (Kioxia Corporation)
- 18595065. STORAGE DEVICE AND DRIVING METHOD OF STORAGE DEVICE simplified abstract (Kioxia Corporation)
- 18596625. SEMICONDUCTOR PACKAGES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18599458. MAGNETIC MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18599458. MAGNETIC MEMORY DEVICE simplified abstract (SK hynix Inc.)
- 18599540. MAGNETIC MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18599986. MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18600230. PHYSICALLY UNCLONABLE FUNCTION CELL AND OPERATION METHOD OF THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18600957. MULTI-LEVEL MEMRISTOR ELEMENTS simplified abstract (Cirrus Logic International Semiconductor Ltd.)
- 18601100. MEMORY READOUT CIRCUIT AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18601994. METHODS OF WRITING AND FORMING MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18602174. MRAM CELL AND MRAM simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18610212. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (UNITED MICROELECTRONICS CORP.)
- 18611753. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (UNITED MICROELECTRONICS CORP.)
- 18615422. CONFINED CELL STRUCTURES AND METHODS OF FORMING CONFINED CELL STRUCTURES simplified abstract (Micron Technology, Inc.)
- 18615459. MAGNETIC TUNNEL JUNCTION DEVICES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18626670. SEMICONDUCTOR DEVICE WITH MAGNETIC TUNNEL JUNCTIONS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18626718. POWER SUPPLY GENERATOR ASSIST simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18627334. PROCESSING AND MEMORY DEVICE AND SYSTEM simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18635929. MRAM REFERENCE CURRENT simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18662053. Semiconductor Memory Device with Spin-Orbit Coupling Channel simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18662168. HIGHLY PHYSICAL ION RESISTIVE SPACER TO DEFINE CHEMICAL DAMAGE FREE SUB 60NM MRAM DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18662806. NON-VOLATILE STATIC RANDOM ACCESS MEMORY (NVSRAM) WITH MULTIPLE MAGNETIC TUNNEL JUNCTION CELLS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18668329. ETCH STOP LAYER FOR MEMORY DEVICE FORMATION simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18670910. GATE DRIVER CIRCUIT AND MEMORY DEVICE INCLUDING THE SAME (Samsung Electronics Co., Ltd.)
- 18677589. MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18677654. MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18683278. MEMORY DEVICE AND MEMORY SYSTEM simplified abstract (SONY SEMICONDUCTOR SOLUTIONS CORPORATION)
- 18691163. SEMICONDUCTOR DEVICE, STORAGE DEVICE, AND ELECTRONIC DEVICE (SEMICONDUCTOR ENERGY LABORATORY CO., LTD.)
- 18702662. MAGNETIC DOMAIN WALL MOTION ELEMENT, MAGNETIC RECORDING ARRAY, AND MAGNETIC MEMORY (TDK CORPORATION)
- 18727465. MAGNETO RESISTIVE MEMORY DEVICE (CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE)
- 18740054. Highly Textured Buffer Layer to Grow YBiPt (110) For Spintronic Applications (Western Digital Technologies, Inc.)
- 18752170. MTJ PILLAR HAVING TEMPERATURE-INDEPENDENT DELTA simplified abstract (International Business Machines Corporation)
- 18754774. MEMORY DEVICE COMPRISING MEMORY CELLS STORING CALIBRATION DATA AND OPERATING METHOD THEREOF (Samsung Electronics Co., Ltd.)
- 18828760. MEMORY DEVICE (Kioxia Corporation)
- 18828809. STORAGE DEVICE (Kioxia Corporation)
- 18829343. MAGNETIC MEMORY DEVICE (Kioxia Corporation)
- 18883314. SEMICONDUCTOR STORAGE DEVICE (Kioxia Corporation)
A
B
I
- Intel corporation (20240206348). PROBABILISTIC AND DETERMINISTIC LOGIC DEVICES WITH REDUCED SYMMETRY MATERIALS simplified abstract
- Intel corporation (20240224814). CHIRAL COUPLING-BASED VALLEYTRONIC MAGNETOELECTRIC SPIN-ORBIT DEVICES simplified abstract
- Intel Corporation patent applications on July 4th, 2024
- Intel Corporation patent applications on June 20th, 2024
- INTEL CORPORATION patent applications on June 20th, 2024
- International business machines corporation (20240099148). MRAM TOP ELECTRODE STRUCTURE WITH LINER LAYER simplified abstract
- International business machines corporation (20240105244). STACKED FET WITH THREE-TERMINAL SOT MRAM simplified abstract
- International business machines corporation (20240112712). SPIN-ORBIT-TORQUE (SOT) MRAM WITH DOUBLED LAYER OF SOT METAL simplified abstract
- International business machines corporation (20240135978). MRAM DEVICE WITH OCTAGON PROFILE simplified abstract
- International business machines corporation (20240188446). MRAM DEVICE WITH WRAP-AROUND TOP ELECTRODE simplified abstract
- International business machines corporation (20240188447). MEMORY STRUCTURE WITH NON-ION BEAM ETCHED MTJ AND TOP ELECTRODE simplified abstract
- International business machines corporation (20240196755). REACTIVE SERIAL RESISTANCE REDUCTION FOR MAGNETORESISTIVE RANDOM-ACCESS MEMORY DEVICES simplified abstract
- International business machines corporation (20240196758). MRAM DEVICE WITH HAMMERHEAD PROFILE simplified abstract
- International business machines corporation (20240224812). RELAXED PITCH BACKSIDE MAGNETO-RESISTIVE RANDOM ACCESS MEMORY INTEGRATION WITH SELF-ALIGNED MICRO STUD AND BACKSIDE POWER DISTRIBUTION NETWORK simplified abstract
- International business machines corporation (20240233793). MRAM DEVICE WITH OCTAGON PROFILE simplified abstract
- International business machines corporation (20240349620). MTJ PILLAR HAVING TEMPERATURE-INDEPENDENT DELTA simplified abstract
- International business machines corporation (20250107452). MRAM DEVICE WITH TUNNEL BARRIER OVERHANG
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on April 25th, 2024
- International Business Machines Corporation patent applications on April 4th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on January 25th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on July 11th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on July 4th, 2024
- International Business Machines Corporation patent applications on June 13th, 2024
- International Business Machines Corporation patent applications on June 6th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on March 14th, 2024
- International Business Machines Corporation patent applications on March 21st, 2024
- International Business Machines Corporation patent applications on March 27th, 2025
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on March 28th, 2024
- International Business Machines Corporation patent applications on October 17th, 2024
K
- Kioxia corporation (20240099155). MAGNETIC MEMORY simplified abstract
- Kioxia corporation (20240099158). MAGNETIC MEMORY DEVICE simplified abstract
- Kioxia corporation (20240304229). MEMORY SYSTEM simplified abstract
- Kioxia corporation (20240312505). MEMORY DEVICE simplified abstract
- Kioxia corporation (20240315143). MAGNETIC MEMORY DEVICE simplified abstract
- Kioxia corporation (20240321334). STORAGE DEVICE AND DRIVING METHOD OF STORAGE DEVICE simplified abstract
- Kioxia corporation (20240321335). MAGNETIC MEMORY DEVICE simplified abstract
- Kioxia corporation (20240428836). MEMORY SYSTEM
- Kioxia corporation (20240428837). MEMORY DEVICE
- Kioxia corporation (20250095705). MEMORY DEVICE
- Kioxia corporation (20250095706). SEMICONDUCTOR STORAGE DEVICE
- Kioxia corporation (20250098545). MAGNETIC MEMORY DEVICE
- Kioxia Corporation patent applications on December 26th, 2024
- Kioxia Corporation patent applications on March 20th, 2025
- Kioxia Corporation patent applications on March 21st, 2024
- Kioxia Corporation patent applications on September 12th, 2024
- Kioxia Corporation patent applications on September 19th, 2024
- Kioxia Corporation patent applications on September 26th, 2024
M
S
- Samsung electronics co., ltd. (20240119983). MEMORY DEVICE WHICH GENERATES IMPROVED WRITE VOLTAGE ACCORDING TO SIZE OF MEMORY CELL simplified abstract
- Samsung electronics co., ltd. (20240164220). MAGNETORESISTIVE RANDOM ACCESS DEVICE simplified abstract
- Samsung electronics co., ltd. (20240234000). PERPENDICULAR SHAPE ANISOTROPY DESIGN WITH DUAL SPIN FILTERING simplified abstract
- Samsung electronics co., ltd. (20240237542). PERPENDICULAR SHAPE ANISOTROPY DESIGN WITH ASYMMETRIC COMPOSITE FREE LAYER simplified abstract
- Samsung electronics co., ltd. (20240237543). PERPENDICULAR SHAPE ANISOTROPY DESIGN WITH REDUCED AEX simplified abstract
- Samsung electronics co., ltd. (20240249759). MULTILAYERED VERTICAL SPIN-ORBIT TORQUE DEVICES simplified abstract
- Samsung electronics co., ltd. (20240249760). MAGNETIC MEMORY DEVICE simplified abstract
- Samsung electronics co., ltd. (20240321333). MAGNETIC TUNNELING JUNCTION DEVICE CAPABLE OF MAGNETIC SWITCHING WITHOUT EXTERNAL MAGNETIC FIELD AND MEMORY DEVICE INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240334840). MAGNETIC TUNNELING JUNCTION DEVICE AND MEMORY DEVICE INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240347089). FE-X TEMPLATING LAYERS FOR GROWTH OF PERPENDICULARLY MAGNETIZED HEUSLER FILMS ON TOP OF A TUNNEL BARRIER simplified abstract
- Samsung electronics co., ltd. (20240349615). MAGNETIC MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240354059). NEUROMORPHIC DEVICE AND DRIVING METHOD THEREOF simplified abstract
- Samsung electronics co., ltd. (20250014619). GATE DRIVER CIRCUIT AND MEMORY DEVICE INCLUDING THE SAME
- Samsung electronics co., ltd. (20250014620). MEMORY DEVICE COMPRISING MEMORY CELLS STORING CALIBRATION DATA AND OPERATING METHOD THEREOF
- SAMSUNG ELECTRONICS CO., LTD. patent applications on April 11th, 2024
- Samsung Electronics Co., Ltd. patent applications on January 23rd, 2025
- SAMSUNG ELECTRONICS CO., LTD. patent applications on January 23rd, 2025
- Samsung Electronics Co., Ltd. patent applications on January 9th, 2025
- Samsung Electronics Co., Ltd. patent applications on July 11th, 2024
- Samsung Electronics Co., Ltd. patent applications on July 25th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on July 25th, 2024
- Samsung Electronics Co., Ltd. patent applications on May 16th, 2024
- Samsung Electronics Co., Ltd. patent applications on October 17th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on October 17th, 2024
- Samsung Electronics Co., Ltd. patent applications on October 24th, 2024
- Samsung Electronics Co., Ltd. patent applications on October 3rd, 2024
- Samsung Electronics Co., Ltd. patent applications on September 26th, 2024
- SK hynix Inc. patent applications on February 13th, 2025
- Sony semiconductor solutions corporation (20240339143). SEMICONDUCTOR STORAGE APPARATUS simplified abstract
- Sony semiconductor solutions corporation (20240347091). MEMORY DEVICE AND MEMORY SYSTEM simplified abstract
- Sony semiconductor solutions corporation (20250006237). MAGNETORESISTIVE EFFECT MEMORY, MEMORY ARRAY, AND MEMORY SYSTEM
- Sony semiconductor solutions corporation (20250006238). SEMICONDUCTOR CIRCUIT
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION patent applications on January 2nd, 2025
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION patent applications on October 10th, 2024
T
- Taiwan semiconductor manufacturing co., ltd. (20240099149). MRAM DEVICE STRUCTURES AND METHODS OF FABRICATING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240224813). MRAM CELL AND MRAM simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240249761). POWER SUPPLY GENERATOR ASSIST simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240251566). PROCESSING AND MEMORY DEVICE AND SYSTEM simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240251568). SEMICONDUCTOR DEVICE WITH MAGNETIC TUNNEL JUNCTIONS simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240315147). MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240428854). OPERATING METHOD, MEMORY SYSTEM, AND CONTROL CIRCUIT
- Taiwan semiconductor manufacturing co., ltd. (20250089578). MAGNETIC TUNNEL JUNCTION (MTJ) STRUCTURE AND MEMORY CELL
