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Category:CPC H01L43/12
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Pages in category "CPC H01L43/12"
The following 14 pages are in this category, out of 14 total.
1
- 18061491. MRAM DEVICE WITH WRAP-AROUND TOP ELECTRODE simplified abstract (International Business Machines Corporation)
- 18062380. MEMORY STRUCTURE WITH NON-ION BEAM ETCHED MTJ AND TOP ELECTRODE simplified abstract (International Business Machines Corporation)
- 18063950. LATERAL HETEROSTRUCTURE ISOLATED COUPLED QUANTUM DOTS simplified abstract (International Business Machines Corporation)
- 18064261. REACTIVE SERIAL RESISTANCE REDUCTION FOR MAGNETORESISTIVE RANDOM-ACCESS MEMORY DEVICES simplified abstract (International Business Machines Corporation)
I
- International business machines corporation (20240196754). LATERAL HETEROSTRUCTURE ISOLATED COUPLED QUANTUM DOTS simplified abstract
- International business machines corporation (20240196755). REACTIVE SERIAL RESISTANCE REDUCTION FOR MAGNETORESISTIVE RANDOM-ACCESS MEMORY DEVICES simplified abstract
- International Business Machines Corporation patent applications on June 13th, 2024
S
- SAMSUNG ELECTRONICS CO., LTD Patent Application Trends in 2024
- Samsung Electronics Co., Ltd. Patent Application Trends in 2024
- SAMSUNG ELECTRONICS CO., LTD. Patent Application Trends in 2024
- Samsung electronics Co., Ltd. Patent Application Trends in 2024
- Samsung electronics CO., LTD. Patent Application Trends in 2025