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Category:CPC C30B29/406
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Pages in category "CPC C30B29/406"
The following 17 pages are in this category, out of 17 total.
1
- 18586297. INDIUM-GALLIUM-NITRIDE LIGHT EMITTING DIODES WITH INCREASED QUANTUM EFFICIENCY simplified abstract (Applied Materials, Inc.)
- 18623278. n-TYPE GaN CRYSTAL, GaN WAFER, AND GaN CRYSTAL, GaN WAFER AND NITRIDE SEMICONDUCTOR DEVICE PRODUCTION METHOD simplified abstract (Mitsubishi Chemical Corporation)
- 18897279. GROUP 13 NITRIDE SINGLE CRYSTAL SUBSTRATE (NGK INSULATORS, LTD.)