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Category:C23C16/455
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Pages in category "C23C16/455"
The following 200 pages are in this category, out of 366 total.
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- 17544993. IN-SITU LOW TEMPERATURE DIELECTRIC DEPOSITION AND SELECTIVE TRIM OF PHASE CHANGE MATERIALS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17549290. PRODUCING POLYCRYSTALLINE DIAMOND COMPACT CUTTERS WITH COATINGS simplified abstract (Saudi Arabian Oil Company)
- 17674977. Deposition Apparatus and Method simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17702105. DEPOSITION APPARATUS simplified abstract (Samsung Electronics Co., Ltd.)
- 17714363. SEMICONDUCTOR PROCESSING APPARATUS AND SEMICONDUCTOR PROCESSING METHOD USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17835073. METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH COMPOSITE CONTACT STRUCTURE simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 17876036. METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE WITH MATERIAL IN MONOCRYSTALLINE PHASE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17878622. SUBSTRATE PROCESSING SYSTEM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17946842. ATOMIC LAYER DEPOSITION PART COATING CHAMBER simplified abstract (Applied Materials, Inc.)
- 17946947. BACKSIDE DEPOSITION FOR WAFER BOW MANAGEMENT simplified abstract (Applied Materials, Inc.)
- 17954960. SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17957613. MINIMIZATION OF CHEMICAL VAPOR INFILTRATION TOOLING HOLE LENGTH THROUGH COUNTERBORES simplified abstract (Raytheon Technologies Corporation)
- 17961214. LOAD LOCK CHAMBERS AND RELATED METHODS AND STRUCTURES FOR BATCH COOLING OR HEATING simplified abstract (Applied Materials, Inc.)
- 17961601. SUBSTRATE PROCESSING APPARATUS AND CONTROL METHOD FOR A SUBSTRATE PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)
- 17962310. HALOGEN-RESISTANT THERMAL BARRIER COATING FOR PROCESSING CHAMBERS simplified abstract (Applied Materials, Inc.)
- 17962378. ATOMIC LAYER DEPOSITION COATING SYSTEM FOR INNER WALLS OF GAS LINES simplified abstract (Applied Materials, Inc.)
- 17991931. AREA SELECTIVE DEPOSITION THROUGH SURFACE SILYLATION simplified abstract (Applied Materials, Inc.)
- 18062502. METHOD OF FORMING LOW-RESISTIVITY RU ALD THROUGH A BI-LAYER PROCESS AND RELATED STRUCTURES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18071391. MATERIALS ENGINEERING FOR ANTI-COKING COATING STACKS simplified abstract (Applied Materials, Inc.)
- 18074197. MULTI-PULSE DEPOSITION PROCESSES simplified abstract (Applied Materials, Inc.)
- 18077225. ELECTROCHEMICAL REDUCTION OF SURFACE METAL OXIDES simplified abstract (Applied Materials, Inc.)
- 18078841. Method of Selective Metal Deposition Using Separated Reactant Activation and Plasma Discharging Zone simplified abstract (Applied Materials, Inc.)
- 18090553. METHODS OF PRODUCING COMPOSITE VEHICLE BRAKING COMPONENTS INCLUDING ALUMINUM ALLOYS simplified abstract (GM GLOBAL TECHNOLOGY OPERATIONS LLC)
- 18093156. PLASMA-ENHANCED MOLYBDENUM DEPOSITION simplified abstract (Applied Materials, Inc.)
- 18099459. ATOMIC LAYER DEPOSITION OF RUTHENIUM OXIDE COATINGS simplified abstract (Applied Materials, Inc.)
- 18100326. ADJUSTABLE CROSS-FLOW PROCESS CHAMBER LID simplified abstract (Applied Materials, Inc.)
- 18108327. MOLYBDENUM(0) PRECURSORS FOR DEPOSITION OF MOLYBDENUM FILMS simplified abstract (Applied Materials, Inc.)
- 18109365. ELECTRONIC DEVICE FABRICATION USING AREA-SELECTIVE DEPOSITION simplified abstract (Applied Materials, Inc.)
- 18118017. HYDROGEN PLASMA TREATMENT FOR FORMING LOGIC DEVICES simplified abstract (Applied Materials, Inc.)
- 18118499. PRECURSOR DELIVERY SYSTEM FOR SEMICONDUCTOR DEVICE FORMATION simplified abstract (Applied Materials, Inc.)
- 18119432. ULTRA HIGH-K HAFNIUM OXIDE AND HAFNIUM ZIRCONIUM OXIDE FILMS simplified abstract (Applied Materials, Inc.)
- 18119432. ULTRA HIGH-K HAFNIUM OXIDE AND HAFNIUM ZIRCONIUM OXIDE FILMS simplified abstract (The Regents of the University of California)
- 18122574. APPARATUS AND METHODS FOR CONTROLLING SUBSTRATE TEMPERATURE DURING PROCESSING simplified abstract (Applied Materials, Inc.)
- 18125435. SUBSTRATE PROCESSING TUBE, SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME, AND SUBSTRATE PROCESSING METHOD USING THE APPARATUS simplified abstract (Samsung Electronics Co., Ltd.)
- 18131212. HIGH TEMPERATURE METAL SEALS FOR VACUUM SEGREGATION simplified abstract (Applied Materials, Inc.)
- 18131956. METHOD OF FORMING A METAL LINER FOR INTERCONNECT STRUCTURES simplified abstract (Applied Materials, Inc.)
- 18133909. CANISTER, PRECURSOR TRANSFER SYSTEM HAVING THE SAME AND METHOD FOR MEASURING PRECURSOR REMAINING AMOUNT THEREOF simplified abstract (Samsung Electronics Co., Ltd.)
- 18136070. EDGE RING, SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME, AND SUBSTRATE PROCESSING METHOD USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18136468. MANUFACTURING METHOD OF PLATINUM-BASED ALLOY CATALYST USING FLUIDIZED ATOMIC LAYER DEPOSITION simplified abstract (HYUNDAI MOTOR COMPANY)
- 18136468. MANUFACTURING METHOD OF PLATINUM-BASED ALLOY CATALYST USING FLUIDIZED ATOMIC LAYER DEPOSITION simplified abstract (KIA CORPORATION)
- 18138192. METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18161045. HIGH QUALITY INSITU TREATED PECVD FILM simplified abstract (Texas Instruments Incorporated)
- 18181077. SEMICONDUCTOR CHAMBER COMPONENTS WITH ADVANCED COATING TECHNIQUES simplified abstract (Applied Materials, Inc.)
- 18209098. COATING SYSTEM AND SUBSTRATE WITH COATING SYSTEM (Raytheon Technologies Corporation)
- 18219368. ATOMIC LAYER DEPOSITION METHODS FOR MAKING OMNIDIRECTIONAL STRUCTURAL COLOR MULTILAYER STRUCTURES (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 18219368. ATOMIC LAYER DEPOSITION METHODS FOR MAKING OMNIDIRECTIONAL STRUCTURAL COLOR MULTILAYER STRUCTURES (Toyota Motor Engineering & Manufacturing North America, Inc.)
- 18223606. PRECURSOR SUPPLY SYSTEM simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18227467. SEMICONDUCTOR MANUFACTURING APPARATUS, GAS SUPPLYING METHOD USING THE SAME, AND SEMICONDUCTOR MANUFACTURING METHOD USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18228191. SUBSTRATE DEGASSING METHOD AND SEMICONDUCTOR FABRICATION METHOD USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18244532. LIQUID RAW MATERIAL SUPPLYING METHOD AND GAS SUPPLY APPARATUS simplified abstract (TOKYO ELECTRON LIMITED)
- 18244694. RARE EARTH-PHOSPHATE-ENHANCED THERMAL BARRIER COATING (RTX CORPORATION)
- 18263920. SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)
- 18275359. FILM FORMING DEVICE AND FILM FORMING METHOD simplified abstract (Tokyo Electron Limited)
- 18278276. TRIPOLAR ELECTRODE ARRANGEMENT FOR ELECTROSTATIC CHUCKS simplified abstract (Lam Research Corporation)
- 18285406. METHOD FOR PRODUCING LAMINATE, PRODUCING APPARATUS FOR LAMINATE, LAMINATE, AND SEMICONDUCTOR DEVICE simplified abstract (SHIN-ETSU CHEMICAL CO., LTD.)
- 18290224. Display Apparatus and Method For Manufacturing Display Apparatus simplified abstract (Semiconductor Energy Laboratory Co., Ltd.)
- 18291532. SELECTIVE DEPOSITION OF GRAPHENE ON COBALT-CAPPED COPPER DUAL DAMASCENE INTERCONNECT (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18327840. GERMANIUM PRECURSORS, METHODS OF FORMING THE GERMANIUM PRECURSORS, AND PRECURSOR COMPOSITIONS COMPRISING THE GERMANIUM PRECURSORS simplified abstract (Micron Technology, Inc.)
- 18337281. METHOD OF DEPOSITION IN HIGH ASPECT RATIO (HAR) FEATURES (Tokyo Electron Limited)
- 18354220. SUBSTRATE PROCESSING APPARATUS, METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM simplified abstract (Kokusai Electric Corporation)
- 18373364. SEMICONDUCTOR MANUFACTURING APPARATUS simplified abstract (Samsung Electronics Co., Ltd.)
- 18381006. SHOWER HEAD AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SHOWER HEAD simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18394133. METHODS FOR INCREASING THE DENSITY OF HIGH-INDEX NANOIMPRINT LITHOGRAPHY FILMS simplified abstract (Applied Materials, Inc.)
- 18395006. PROCESS CHAMBER VOLUME ADJUSTMENT simplified abstract (ASM IP Holding B.V.)
- 18395801. REMOTE SOLID REFILL CHAMBER simplified abstract (ASM IP Holding B.V.)
- 18395822. METHODS AND APPARATUS FOR AN ACCUMULATOR simplified abstract (ASM IP Holding B.V.)
- 18396857. METHOD AND SYSTEM FOR DEPOSITING BORON CARBON NITRIDE simplified abstract (ASM IP Holding B.V.)
- 18398796. METHODS FOR FORMING GAP-FILLING MATERIALS AND RELATED APPARATUS AND STRUCTURES simplified abstract (ASM IP Holding B.V.)
- 18398995. METHOD, SYSTEM AND APPARATUS FOR FORMING EPITAXIAL TEMPLATE LAYER simplified abstract (ASM IP Holding B.V.)
- 18416304. Fluorinated Aluminum Coated Component for a Substrate Processing Apparatus and Method of Producing simplified abstract (Applied Materials, Inc.)
- 18416990. SEMICONDUCTOR MANUFACTURING DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18418757. SUBSTRATE TREATMENT METHOD, SUBSTRATE TREATMENT APPARATUS, AND COMPUTER STORAGE MEDIUM simplified abstract (Tokyo Electron Limited)
- 18419021. GAS SUPPLY SYSTEM simplified abstract (Samsung Electronics Co., Ltd.)
- 18419389. MONOLITHIC MODULAR MICROWAVE SOURCE WITH INTEGRATED PROCESS GAS DISTRIBUTION simplified abstract (Applied Materials, Inc.)
- 18419592. FILM FORMING APPARATUS AND METHOD FOR MANUFACTURING PART HAVING FILM CONTAINING SILICON simplified abstract (Tokyo Electron Limited)
- 18427992. STATE DETERMINATION METHOD AND COMPUTER-READABLE RECORDING MEDIUM simplified abstract (Tokyo Electron Limited)
- 18428866. SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM simplified abstract (Kokusai Electric Corporation)
- 18434982. CYCLICAL DEPOSITION METHODS AND STRUCTURES FORMED USING THE METHODS simplified abstract (ASM IP Holding B.V.)
- 18447479. SUBSTRATE TREATING APPARATUS AND SUBSTRATE TREATING METHOD USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18455508. SEAM PERFORMANCE IMPROVEMENT USING HYDROXYLATION FOR GAPFILL (Applied Materials, Inc.)
- 18455941. THIN FILM STRUCTURE INCLUDING DIELECTRIC MATERIAL LAYER, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE EMPLOYING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18460759. SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Kioxia Corporation)
- 18471854. METHOD FOR SEMICONDUCTOR PROCESSING (Tokyo Electron Limited)
- 18479214. APPARATUS FOR TREATING SUBSTRATE AND METHOD FOR TREATING SUBSTRATE USING THE SAME simplified abstract (Samsung Display Co., LTD.)
- 18479233. ATOMIC LAYER DEPOSITION APPARATUS simplified abstract (Samsung Display Co., LTD.)
- 18484057. FAST SWITCHING GAS CIRCUITS AND PROCESSING CHAMBERS, AND RELATED METHODS AND APPARATUS, FOR GAS STABILIZATION (Applied Materials, Inc.)
- 18508704. PROCESS CHAMBER CLEANING APPARATUS AND METHOD simplified abstract (Samsung Electronics Co., Ltd.)
- 18515842. Semiconductor Device, Method and Machine of Manufacture simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18517837. VAPOR PHASE PRECURSOR DELIVERY SYSTEM simplified abstract (ASM IP Holding B.V.)
- 18518042. SYSTEMS, DEVICES, AND METHODS FOR FORMING LAYERS COMPRISING A GROUP 14 ELEMENT, A PNICTOGEN, AND A CHALCOGEN simplified abstract (ASM IP Holding B.V.)
- 18522056. SCANDIUM PRECURSOR FOR SC2O3 OR SC2S3 ATOMIC LAYER DEPOSITION simplified abstract (Intel Corporation)
- 18522825. PRECOAT METHOD FOR SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)
- 18523021. HIGH-THROUGHPUT SILICON CARBIDE REACTOR simplified abstract (ASM IP Holding B.V.)
- 18523060. SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD simplified abstract (Tokyo Electron Limited)
- 18523394. SINGLE WAFER PROCESSING ENVIRONMENTS WITH SPATIAL SEPARATION simplified abstract (Applied Materials, Inc.)
- 18524767. FILM DEPOSITION APPARATUS FOR FINE PATTERN FORMING simplified abstract (TOKYO ELECTRON LIMITED)
- 18526472. SUBSTRATE PROCESSING APPARATUS, PROCESSING METHOD, AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM simplified abstract (Kokusai Electric Corporation)
- 18534880. SHOWER HEAD ASSEMBLY AND FILM FORMING APPARATUS simplified abstract (Tokyo Electron Limited)
- 18535442. SHOWERHEAD AND APPARATUS FOR PROCESSING A SUBSTRATE INCLUDING THE SAME (Samsung Electronics Co., Ltd.)
- 18536813. DEPOSITION APPARATUS AND PROCESSING METHOD simplified abstract (Tokyo Electron Limited)
- 18540311. TUNABLE HARDWARE TO CONTROL RADIAL FLOW DISTRIBUTION IN A PROCESSING CHAMBER simplified abstract (Applied Materials, Inc.)
- 18543996. TREATMENTS TO ENHANCE MATERIAL STRUCTURES simplified abstract (Applied Materials, Inc.)
- 18546140. SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)
- 18547481. NON-METAL INCORPORATION IN MOLYBDENUM ON DIELECTRIC SURFACES simplified abstract (Lam Research Corporation)
- 18552957. FILM FORMING METHOD AND SUBSTRATE PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)
- 18555432. GAS SUPPLY SYSTEM, SUBSTRATE PROCESSING APPARATUS, AND OPERATION METHOD FOR GAS SUPPLY SYSTEM simplified abstract (Tokyo Electron Limited)
- 18557675. PROCESSING SYSTEM AND METHODS FOR FORMING VOID-FREE AND SEAM-FREE TUNGSTEN FEATURES simplified abstract (Applied Materials, Inc.)
- 18558388. METHODS TO IMPROVE PRODUCTIVITY OF ADVANCED CVD W GAPFILL PROCESS simplified abstract (Applied Materials, Inc.)
- 18580603. INCREASING DEPOSITION RATES OF OXIDE FILMS (Lam Research Corporation)
- 18581154. SYSTEM AND METHOD FOR BACKSIDE DEPOSITION OF A SUBSTRATE simplified abstract (Tokyo Electron Limited)
- 18583059. DEPOSITION APPARATUS AND DEPOSITION METHOD simplified abstract (Tokyo Electron Limited)
- 18585303. IN SITU NUCLEATION FOR NANOCRYSTALLINE DIAMOND FILM DEPOSITION simplified abstract (Applied Materials, Inc.)
- 18589845. SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD simplified abstract (Tokyo Electron Limited)
- 18591336. SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM simplified abstract (Kokusai Electric Corporation)
- 18592646. SUBSTRATE PROCESSING APPARATUS, CLEANING METHOD, SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM simplified abstract (Kokusai Electric Corporation)
- 18595374. SEGMENTED FORMATION OF GATE INTERFACE simplified abstract (Applied Materials, Inc.)
- 18595913. METHODS FOR COATING A SUBSTRATE WITH MAGNESIUM FLUORIDE VIA ATOMIC LAYER DEPOSITION simplified abstract (CORNING INCORPORATED)
- 18597415. SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM simplified abstract (Kokusai Electric Corporation)
- 18599767. Processing Chamber With Multiple Plasma Units simplified abstract (Applied Materials, Inc.)
- 18600373. SUBSTRATE PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)
- 18602099. CHAMBER ARCHITECTURE FOR EPITAXIAL DEPOSITION AND ADVANCED EPITAXIAL FILM APPLICATIONS simplified abstract (Applied Materials, Inc.)
- 18604257. CAPACITIVE SENSOR FOR MONITORING GAS CONCENTRATION simplified abstract (Applied Materials, Inc.)
- 18608005. SELECTIVE COBALT DEPOSITION ON COPPER SURFACES simplified abstract (Applied Materials, Inc.)
- 18609379. RUNOUT AND WOBBLE MEASUREMENT FIXTURES simplified abstract (ASM IP Holding B.V.)
- 18610937. ORGANIC ELECTROLUMINESCENT DEVICES simplified abstract (Universal Display Corporation)
- 18612197. Additive Manufacturing Powder, Method For Producing Additive Manufacturing Powder, And Additively Manufactured Body simplified abstract (SEIKO EPSON CORPORATION)
- 18613671. METHOD FOR COATING PHARMACEUTICAL SUBSTRATES simplified abstract (Applied Materials, Inc.)
- 18614912. GAS DELIVERY FOR TUNGSTEN-CONTAINING LAYER simplified abstract (Applied Materials, Inc.)
- 18615834. SYSTEMS AND METHODS FOR SUBSTRATE SUPPORT TEMPERATURE CONTROL simplified abstract (Applied Materials, Inc.)
- 18616741. VOID FREE LOW STRESS FILL simplified abstract (Lam Research Corporation)
- 18624402. FILM FORMING APPARATUS AND FILM FORMING METHOD simplified abstract (Tokyo Electron Limited)
- 18625401. ORGANIC VAPOR JET PRINTING SYSTEM simplified abstract (Universal Display Corporation)
- 18626864. INTEGRATED METHOD AND TOOL FOR HIGH QUALITY SELECTIVE SILICON NITRIDE DEPOSITION simplified abstract (Applied Materials, Inc.)
- 18639575. METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18649004. METAL COMPONENTS WITH INERT VAPOR PHASE COATING ON INTERNAL SURFACES simplified abstract (AGILENT TECHNOLOGIES, INC.)
- 18649035. METAL COMPONENTS WITH INERT VAPOR PHASE COATING ON INTERNAL SURFACES simplified abstract (AGILENT TECHNOLOGIES, INC.)
- 18649171. METAL COMPONENTS WITH INERT VAPOR PHASE COATING ON INTERNAL SURFACES simplified abstract (AGILENT TECHNOLOGIES, INC.)
- 18649199. METAL COMPONENTS WITH INERT VAPOR PHASE COATING ON INTERNAL SURFACES simplified abstract (AGILENT TECHNOLOGIES, INC.)
- 18649231. METAL COMPONENTS WITH INERT VAPOR PHASE COATING ON INTERNAL SURFACES simplified abstract (AGILENT TECHNOLOGIES, INC.)
- 18649268. METAL COMPONENTS WITH INERT VAPOR PHASE COATING ON INTERNAL SURFACES simplified abstract (AGILENT TECHNOLOGIES, INC.)
- 18649302. METAL COMPONENTS WITH INERT VAPOR PHASE COATING ON INTERNAL SURFACES simplified abstract (AGILENT TECHNOLOGIES, INC.)
- 18660318. Adjusting Work Function Through Adjusting Deposition Temperature simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18665683. HEATER ASSEMBLY WITH PROCESS GAP CONTROL FOR BATCH PROCESSING CHAMBERS simplified abstract (Applied Materials, Inc.)
- 18669753. SEMICONDUCTOR PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME (SAMSUNG ELECTRONICS CO., LTD.)
- 18671616. FACEPLATE TENSIONING METHOD AND APPARATUS TO PREVENT DROOP simplified abstract (Applied Materials, Inc.)
- 18701429. MODULATING THERMAL CONDUCTIVITY TO CONTROL COOLING OF SHOWERHEAD (LAM RESEARCH CORPORATION)
- 18705428. ATOMIC LAYER DEPOSITION SEAM REDUCTION (Lam Research Corporation)
- 18709780. CONFORMAL, CARBON-DOPED SILICON NITRIDE FILMS AND METHODS THEREOF (Lam Research Corporation)
- 18733504. MULTI-THERMAL CVD CHAMBERS WITH SHARED GAS DELIVERY AND EXHAUST SYSTEM simplified abstract (Applied Materials, Inc.)
- 18740699. METHOD, SYSTEM, AND APPARATUS FOR DEPOSITION OF TRANSITION METAL FILM (ASM IP Holding B.V.)
- 18747687. GAS INJECTOR FOR EPITAXY AND CVD CHAMBER simplified abstract (Applied Materials, Inc.)
- 18763231. METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, RECORDING MEDIUM AND SUBSTRATE PROCESSING APPARATUS (Kokusai Electric Corporation)
- 18800442. SUBSTRATE PROCESSING APPARATUS AND MANUFACTURING METHOD THEREOF (SEMES CO., LTD.)
- 18808746. MULTI-STAGE PUMPING LINER (Applied Materials, Inc.)
- 18815687. ATOMIC LAYER DEPOSITION PART COATING CHAMBER (Applied Materials, Inc.)
- 18817577. ROTATING SUBSTRATE SUPPORT (ASM IP Holding B.V.)
- 18818298. VAPOR DEPOSITION PROCESSES (ASM IP Holding B.V.)
- 18819238. FILM-FORMING METHOD AND FILM-FORMING APPARATUS (Tokyo Electron Limited)
- 18830706. METHODS AND SYSTEM FOR MITIGATING CVD FORELINE GROWTH (ASM IP Holding B.V.)
- 18884515. SUBSTRATE PROCESSING APPARATUS WITH FLOW CONTROL RING AND METHOD OF USING SAME (ASM IP Holding B.V.)
- 18884897. SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM (Kokusai Electric Corporation)
- 18886400. METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM (Kokusai Electric Corporation)
- 18887572. PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, PROCESSING APPARATUS, AND RECORDING MEDIUM (Kokusai Electric Corporation)
- 18889069. SELECTIVE DEPOSITION OF ORGANIC POLYMER MATERIAL AND DEPOSITION ASSEMBLIES (ASM IP Holding B.V.)
- 18889140. SELECTIVE DEPOSITION OF INHIBITOR MATERIAL AND A DEPOSITION ASSEMBLIES (ASM IP Holding B.V.)
- 18889183. SEMICONDUCTOR MANUFACTURING APPARATUS AND PROCESS (ASM IP Holding B.V.)
- 18890180. Substrate Processing Apparatus, Substrate Processing Method, Method of Manufacturing Semiconductor Device and Non-transitory Computer-readable Recording Medium (Kokusai Electric Corporation)
- 18893142. SUBSTRATE PROCESSING APPARATUS (Tokyo Electron Limited)
- 18894881. SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM (Kokusai Electric Corporation)
- 18895226. SELECTIVE PROCESSING WITH ETCH RESIDUE-BASED INHIBITORS (Lam Research Corporation)
- 18940580. SCREWLESS SEMICONDUCTOR PROCESSING CHAMBERS (Taiwan Semiconductor Manufacturing Company, LTD.)
- 18943632. IN-SITU SEMICONDUCTOR PROCESSING CHAMBER TEMPERATURE APPARATUS (Applied Materials, Inc.)
- 18944529. PROCESSING APPARATUS AND PROCESSING METHOD (Tokyo Electron Limited)
- 18946110. SUBSTRATE CLEANING METHOD AND SUBSTRATE CLEANING DEVICE (Tokyo Electron Limited)
- 18946807. MULTILAYER COATING FOR CORROSION RESISTANCE (Applied Materials, Inc.)
- 18957283. TIN OXIDE MANDRELS IN PATTERNING (Lam Research Corporation)
- 18961055. GAS TRANSPORT SYSTEM (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18962380. SHOWERHEAD FOR PROCESS TOOL (Tokyo Electron Limited)
- 18964874. SUBSTRATE PROCESSING APPARATUS, CONTROL SYSTEM, AND CONTROL METHOD (Tokyo Electron Limited)
- 18967466. SELECTIVE DEPOSITION OF MATERIAL COMPRISING SILICON AND OXYGEN USING PLASMA (ASM IP Holding B.V.)
- 18967876. GAS-PHASE REACTOR SYSTEM INCLUDING A GAS DETECTOR (ASM IP Holding B.V.)
- 18970001. METHODS FOR DEPOSITING A MOLYBDENUM NITRIDE FILM ON A SURFACE OF A SUBSTRATE BY A CYCLICAL DEPOSITION PROCESS AND RELATED SEMICONDUCTOR DEVICE STRUCTURES INCLUDING A MOLYBDENUM NITRIDE FILM (ASM IP Holding B.V.)
- 18973637. FILM FORMING APPARATUS (Tokyo Electron Limited)
- 18974589. Plasma Processing Device (Tokyo Electron Limited)
- 18975131. PLASMA PROCESSING APPARATUS (Tokyo Electron Limited)
2
- 20240011153. CONTINUOUS LINER FOR USE IN A PROCESSING CHAMBER simplified abstract (Applied Materials, Inc.)
- 20240011156. DEPOSITION APPARATUS simplified abstract (Samsung Display Co., Ltd.)
- 20240011159. PE-CVD APPARATUS AND METHOD simplified abstract (SPTS Technologies Limited)
- 20240018649. Powder-Surface Treatment Apparatus simplified abstract (Hyundai Motor Company)
- 20240018660. PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD simplified abstract (Tokyo Electron Limited)
- 20240021444. BATCH PROCESSING APPARATUS, SYSTEMS, AND RELATED METHODS AND STRUCTURES FOR EPITAXIAL DEPOSITION OPERATIONS simplified abstract (APPLIED MATERIALS, INC.)
- 20240035158. DEPOSITING COATINGS ON AND WITHIN HOUSINGS, APPARATUS, OR TOOLS UTILIZING PRESSURIZED CELLS simplified abstract (Halliburton Energy Services, Inc.)
- 20240043999. SINGLE PROCESS GAS FEED LINE ARCHITECTURE simplified abstract (Applied Materials, Inc.)
- 20240087856.SUBSTRATE TREATING APPARATUS AND SUBSTRATE TREATING METHOD USING THE SAME simplified abstract (samsung electronics co., ltd.)
3
A
- Applied materials, inc. (20240247370). ATOMIC LAYER DEPOSITION OF RUTHENIUM OXIDE COATINGS simplified abstract
- Applied materials, inc. (20240247373). ADJUSTABLE CROSS-FLOW PROCESS CHAMBER LID simplified abstract
- Applied materials, inc. (20240247374). PRECURSOR DELIVERY SYSTEM FOR SEMICONDUCTOR DEVICE FORMATION simplified abstract
