View source for Taiwan semiconductor manufacturing company, ltd. (20250130367). WAVEGUIDE PHOTODETECTOR AND METHOD FOR FORMING THE SAME

=WAVEGUIDE PHOTODETECTOR AND METHOD FOR FORMING THE SAME=


==Organization Name==

[[:Category:taiwan semiconductor manufacturing company, ltd.|taiwan semiconductor manufacturing company, ltd.]]


[[Category:taiwan semiconductor manufacturing company, ltd.]]

==Inventor(s)==

[[:Category:Chih-Tsung Shih of Hsinchu City TW|Chih-Tsung Shih of Hsinchu City TW]][[Category:Chih-Tsung Shih of Hsinchu City TW]]

[[:Category:Chi-Yuan Shih of Hsinchu TW|Chi-Yuan Shih of Hsinchu TW]][[Category:Chi-Yuan Shih of Hsinchu TW]]

==WAVEGUIDE PHOTODETECTOR AND METHOD FOR FORMING THE SAME==


This abstract first appeared for US patent application 20250130367 titled 'WAVEGUIDE PHOTODETECTOR AND METHOD FOR FORMING THE SAME

==Original Abstract Submitted==

a waveguide photodetector includes a slab over a substrate, first and second contact portions protruding upward from the slab, and a ridge protruding upward from the slab between the first and second contact portions. a first semiconductor layer is over the substrate and includes a first doped region in the first contact portion, a second doped region in the slab between the first contact portion and the ridge, a third doped region and a sixth doped region in the ridge, a fourth doped region in the second contact portion, a fifth doped region in the slab between the second contact portion and the ridge, a first intrinsic region between the sixth and third doped regions, and a second intrinsic region between the sixth and fifth doped regions. a second semiconductor layer is over the first intrinsic region and between the sixth and third doped regions.



[[Category:G02B6/122]]
[[Category:G02B6/12]]
[[Category:G02B6/136]]
[[Category:H01L31/0232]]
[[Category:H01L31/107]]
[[Category:H01L31/18]]
[[Category:CPC_G02B6/122]]