View source for Samsung electronics co., ltd. (20250022828). SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME

=SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME=


==Organization Name==

[[:Category:samsung electronics co., ltd.|samsung electronics co., ltd.]]


[[Category:samsung electronics co., ltd.]]

==Inventor(s)==

[[:Category:Hyoeun Kim of Suwon-si (KR)|Hyoeun Kim of Suwon-si (KR)]][[Category:Hyoeun Kim of Suwon-si (KR)]]

[[:Category:Haksun Lee of Suwon-si (KR)|Haksun Lee of Suwon-si (KR)]][[Category:Haksun Lee of Suwon-si (KR)]]

[[:Category:Dohyun Kim of Suwon-si (KR)|Dohyun Kim of Suwon-si (KR)]][[Category:Dohyun Kim of Suwon-si (KR)]]

[[:Category:Sunkyoung Seo of Suwon-si (KR)|Sunkyoung Seo of Suwon-si (KR)]][[Category:Sunkyoung Seo of Suwon-si (KR)]]

[[:Category:Chajea Jo of Suwon-si (KR)|Chajea Jo of Suwon-si (KR)]][[Category:Chajea Jo of Suwon-si (KR)]]

==SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME==


This abstract first appeared for US patent application 20250022828 titled 'SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME




==Original Abstract Submitted==

the present disclosure relates to semiconductor packages and methods of fabricating the semiconductor packages. an example semiconductor package includes a first semiconductor die including a first substrate and a first bonding layer on the first substrate, a second semiconductor die disposed on the first semiconductor die, the second semiconductor die including a second substrate and a second bonding layer under the second substrate, and a silicon oxide layer interposed between the first semiconductor die and the second semiconductor die, where at least one pore is disposed in the silicon oxide layer, and the at least one pore has a height of 1 Å to 2 nm.



[[Category:H01L23/00]]
[[Category:H01L25/18]]
[[Category:H10B80/00]]
[[Category:CPC_H01L24/29]]