Pages that link to "Category:Sagar Suthram of Portland OR (US)"
The following pages link to Category:Sagar Suthram of Portland OR (US):
Displaying 50 items.
- Patent Applications Report for 29th Dec 2023 (← links)
- 17850090. PERFORMING DISTRIBUTED PROCESSING USING DISTRIBUTED MEMORY simplified abstract (Intel Corporation) (← links)
- 17850044. RECONFIGURABLE VECTOR PROCESSING IN A MEMORY simplified abstract (Intel Corporation) (← links)
- 18314875. INTEGRATED CIRCUIT DEVICES WITH ANGLED TRANSISTORS AND ANGLED ROUTING TRACKS simplified abstract (Intel Corporation) (← links)
- 17846086. PACKAGE ARCHITECTURE WITH VERTICAL STACKING OF INTEGRATED CIRCUIT DIES HAVING PLANARIZED EDGES simplified abstract (Intel Corporation) (← links)
- 17846129. PACKAGE ARCHITECTURE WITH VERTICALLY STACKED BRIDGE DIES HAVING PLANARIZED EDGES simplified abstract (Intel Corporation) (← links)
- 17846153. PACKAGE ARCHITECTURE OF THREE-DIMENSIONAL INTERCONNECT CUBE WITH INTEGRATED CIRCUIT DIES HAVING PLANARIZED EDGES simplified abstract (Intel Corporation) (← links)
- 17846173. PACKAGE ARCHITECTURE OF PHOTONIC SYSTEM WITH VERTICALLY STACKED DIES HAVING PLANARIZED EDGES simplified abstract (Intel Corporation) (← links)
- 17846109. PACKAGE ARCHITECTURE WITH VERTICAL STACKING OF INTEGRATED CIRCUIT DIES HAVING PLANARIZED EDGES AND MULTI-SIDE ROUTING simplified abstract (Intel Corporation) (← links)
- 17851960. INTEGRATED CIRCUIT STRUCTURES HAVING AOI GATES WITH ROUTING ACROSS NANOWIRES simplified abstract (Intel Corporation) (← links)
- 18312847. STATIC RANDOM-ACCESS MEMORY DEVICES WITH ANGLED TRANSISTORS simplified abstract (Intel Corporation) (← links)
- 17851967. INTEGRATED CIRCUIT STRUCTURES HAVING MEMORY WITH BACKSIDE DRAM AND POWER DELIVERY simplified abstract (Intel Corporation) (← links)
- 18314862. LOGIC CIRCUITS USING VERTICAL TRANSISTORS WITH BACKSIDE SOURCE OR DRAIN REGIONS simplified abstract (Intel Corporation) (← links)
- 17930825. FULL WAFER DEVICE WITH FRONT SIDE PASSIVE ELECTRONIC COMPONENTS simplified abstract (Intel Corporation) (← links)
- 17930841. FULL WAFER DEVICE WITH BACK SIDE INTERCONNECTS AND WAFER-SCALE INTEGRATION simplified abstract (Intel Corporation) (← links)
- 17933589. HYBRID MANUFACTURING OF ACCESS TRANSISTORS FOR MEMORY simplified abstract (Intel Corporation) (← links)
- Intel corporation (20240113025). ULTRA-THIN SEMI-METALS FOR LOW TEMPERATURE CONDUCTION simplified abstract (← links)
- Intel corporation (20240103216). VERTICAL THROUGH-SILICON WAVEGUIDE FABRICATION METHOD AND TOPOLOGIES simplified abstract (← links)
- Intel corporation (20240103304). VERTICAL PN JUNCTION PHOTONICS MODULATORS WITH BACKSIDE CONTACTS AND LOW TEMPERATURE OPERATION simplified abstract (← links)
- Intel corporation (20240105248). TCAM WITH HYSTERETIC OXIDE MEMORY CELLS simplified abstract (← links)
- Intel corporation (20240105582). LOW TEMPERATURE CAPACITIVELY COUPLED DEVICE FOR LOW NOISE CIRCUITS simplified abstract (← links)
- Intel corporation (20240105584). BURIED VIA THROUGH FRONT-SIDE AND BACK-SIDE METALLIZATION LAYERS WITH OPTIONAL CYLINDRICAL MIM CAPACITOR simplified abstract (← links)
- Intel corporation (20240105585). SOLID STATE ELECTROLYTES FOR BACKEND SUPERCAPACITORS simplified abstract (← links)
- Intel corporation (20240105596). INTEGRATED CIRCUIT DEVICES WITH ANGLED INTERCONNECTS simplified abstract (← links)
- Intel corporation (20240105635). SELF-ALIGNMENT LAYER WITH LOW-K MATERIAL PROXIMATE TO VIAS simplified abstract (← links)
- Intel corporation (20240105677). RECONSTITUTED WAFER WITH SIDE-STACKED INTEGRATED CIRCUIT DIE simplified abstract (← links)
- Intel corporation (20240105700). SILICON CARBIDE POWER DEVICES INTEGRATED WITH SILICON LOGIC DEVICES simplified abstract (← links)
- Intel corporation (20240105811). FERROELECTRIC TUNNEL JUNCTION DEVICES FOR LOW VOLTAGE AND LOW TEMPERATURE OPERATION simplified abstract (← links)
- Intel corporation (20240105860). LOW TEMPERATURE VARACTORS USING VARIABLE CAPACITANCE MATERIALS simplified abstract (← links)
- Intel corporation (20240107749). ARRANGEMENTS FOR MEMORY WITH ONE ACCESS TRANSISTOR FOR MULTIPLE CAPACITORS simplified abstract (← links)
- 17958283. ULTRA-THIN SEMI-METALS FOR LOW TEMPERATURE CONDUCTION simplified abstract (Intel Corporation) (← links)
- Intel corporation (20240215222). INTEGRATED CIRCUIT STRUCTURES HAVING BACKSIDE POWER DELIVERY AND SIGNAL ROUTING FOR FRONT SIDE DRAM simplified abstract (← links)
- Intel corporation (20240215256). INTEGRATED CIRCUIT STRUCTURES HAVING BACKSIDE CAPACITORS simplified abstract (← links)
- 18088543. INTEGRATED CIRCUIT STRUCTURES HAVING BACKSIDE POWER DELIVERY AND SIGNAL ROUTING FOR FRONT SIDE DRAM simplified abstract (Intel Corporation) (← links)
- 18088552. INTEGRATED CIRCUIT STRUCTURES HAVING BACKSIDE CAPACITORS simplified abstract (Intel Corporation) (← links)
- Intel corporation (20240222228). DEVICES IN A SILICON CARBIDE LAYER COUPLED WITH DEVICES IN A GALLIUM NITRIDE LAYER simplified abstract (← links)
- Intel corporation (20240222271). INTEGRATED CIRCUIT STRUCTURES HAVING ROUTING ACROSS LAYERS OF CHANNEL STRUCTURES simplified abstract (← links)
- Intel corporation (20240222276). INTEGRATED CIRCUIT STRUCTURES HAVING LOOKUP TABLE DECODERS FOR FPGAS simplified abstract (← links)
- Intel corporation (20240222321). PACKAGE ARCHITECTURE WITH MEMORY CHIPS HAVING DIFFERENT PROCESS REGIONS simplified abstract (← links)
- Intel corporation (20240222326). PACKAGE ARCHITECTURE WITH MEMORY CHIPS HAVING DIFFERENT PROCESS REGIONS simplified abstract (← links)
- Intel corporation (20240222328). PACKAGE ARCHITECTURE WITH MEMORY CHIPS HAVING DIFFERENT PROCESS REGIONS simplified abstract (← links)
- Intel corporation (20240222347). MODULAR MEMORY BLOCKS FOR INTEGRATED CIRCUIT DEVICES simplified abstract (← links)
- Intel corporation (20240222435). COUPLING A LAYER OF SILICON CARBIDE WITH AN ADJACENT LAYER simplified abstract (← links)
- Intel corporation (20240222438). TRANSISTOR INCLUDING WIDE BAND GAP MATERIALS simplified abstract (← links)
- Intel corporation (20240222469). TRANSISTOR IN A SILICON CARBIDE LAYER AND A TRANSISTOR IN A GALLIUM NITRIDE LAYER IN A CASCODE DESIGN simplified abstract (← links)
- Intel corporation (20240222520). INTEGRATED CIRCUIT STRUCTURES HAVING VERTICAL SHARED GATE HIGH-DRIVE THIN FILM TRANSISTORS simplified abstract (← links)
- Intel corporation (20240224488). INTEGRATED CIRCUIT STRUCTURES HAVING TWO-LEVEL MEMORY simplified abstract (← links)
- Intel corporation (20240224504). DYNAMIC RANDOM-ACCESS MEMORY USING WIDE BAND GAP MATERIALS simplified abstract (← links)
- Intel corporation (20240224508). INTEGRATED CIRCUIT STRUCTURES HAVING BIT-COST SCALING WITH RELAXED TRANSISTOR AREA simplified abstract (← links)
- 18089931. DEVICES IN A SILICON CARBIDE LAYER COUPLED WITH DEVICES IN A GALLIUM NITRIDE LAYER simplified abstract (Intel Corporation) (← links)
