WAVY-SHAPED EPITAXIAL SOURCE/DRAIN STRUCTURES: abstract simplified (17815884)

• This abstract for appeared for patent application number 17815884 Titled 'WAVY-SHAPED EPITAXIAL SOURCE/DRAIN STRUCTURES'

Simplified Explanation

The abstract describes a new type of structure for multigate devices, specifically the source/drain structures. These structures have a wavy shape and are made using a process called epitaxy. The device consists of two fins that run along a certain direction, with each fin having a non-recessed part and a recessed part. A gate, which runs in a different direction, wraps around the non-recessed parts of both fins. The recessed parts of the fins have a merged epitaxial source/drain, and on top of that is a source/drain contact. The interface between the source/drain contact and the merged epitaxial source/drain is V-shaped. The source/drain contact extends below the tops of the non-recessed parts of the fins.

Original Abstract Submitted

Wavy-shaped epitaxial source/drain structures for multigate devices and methods of fabrication thereof are disclosed herein. An exemplary device includes a first fin and a second fin extending lengthwise along a first direction. The first fin and the second fin each have a non-recessed portion and a recessed portion. A gate extends lengthwise along a second direction that is different than the first direction. The gate wraps the non-recessed portion of the first fin and the non-recessed portion of the second fin. A merged epitaxial source/drain is on the recessed portion of the first fin and the recessed portion of the second fin. A source/drain contact is on the merged epitaxial source/drain. The source/drain contact and the merged epitaxial source/drain have a V-shaped interface therebetween. The source/drain contact extends below tops of the non-recessed portions of the first fin and the second fin.