US Patent Application 18449734. SEMICONDUCTOR DEVICES simplified abstract

SEMICONDUCTOR DEVICES

Organization Name

SAMSUNG ELECTRONICS CO., LTD.==Inventor(s)==

[[Category:MYUNG GIL Kang of Suwon-si (KR)]]

[[Category:Dong Won Kim of Seongnam-si (KR)]]

[[Category:Woo Seok Park of Ansan-si (KR)]]

[[Category:Keun Hwi Cho of Seoul (KR)]]

[[Category:Sung Gi Hur of Hwaseong-si (KR)]]

SEMICONDUCTOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18449734 titled 'SEMICONDUCTOR DEVICES

Simplified Explanation

The patent application describes a semiconductor device with a unique structure for improved performance.

• The device includes a first active pattern consisting of a lower pattern and a sheet pattern, both arranged in a specific direction.
• A gate electrode is positioned on the lower pattern, surrounding the sheet pattern, and extending in a different direction.
• The lower pattern has two opposite sidewalls, each extending in the same direction as the active pattern.
• The gate electrode overlaps one sidewall of the lower pattern by a certain depth, and the other sidewall by a different depth.
• The depth of overlap on each sidewall is not the same, providing a distinct configuration for the device.

Original Abstract Submitted

Semiconductor devices include a first active pattern including a first lower pattern extending in a first direction and a first sheet pattern spaced apart from the first lower pattern; and a first gate electrode on the first lower pattern, the first gate electrode extending in a second direction and surrounding the first sheet pattern, wherein the first lower pattern includes a first sidewall and a second sidewall opposite to each other, each of the first sidewall of the first lower pattern and the second sidewall of the first lower pattern extends in the first direction, the first gate electrode overlaps the first sidewall of the first lower pattern in the second direction by a first depth, the first gate electrode overlaps the second sidewall of the first lower pattern in the second direction by a second depth, and the first depth is different from the second depth.