US Patent Application 18448673. SOLID-STATE IMAGING SENSOR simplified abstract
Contents
SOLID-STATE IMAGING SENSOR
Organization Name
Panasonic Intellectual Property Management Co., Ltd.
Inventor(s)
SOLID-STATE IMAGING SENSOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18448673 titled 'SOLID-STATE IMAGING SENSOR
Simplified Explanation
The patent application describes a solid state image sensor with multiple pixel cells and a vertical scanning circuit.
- Each pixel cell includes various components such as an avalanche photodiode, a floating diffusion portion, and different transistors.
- The amplifier transistor in each pixel cell generates a voltage signal based on the charge stored in the floating diffusion portion.
- A capacitor is connected to a count transistor and has multiple terminals.
- The vertical scanning circuit can supply different voltage levels to the terminals of the capacitors.
- The innovation allows for improved image sensing and signal processing capabilities in the image sensor.
Original Abstract Submitted
A solid state image sensor includes at least a plurality of pixel cells and a vertical scanning circuit. Each of the pixel cells includes an avalanche photodiode, a floating diffusion portion, a transfer transistor, a reset transistor, an amplifier transistor, a selection transistor, a count transistor, and a capacitor. The amplifier transistor outputs a voltage signal responsive to the amount of charge stored in the floating diffusion portion. The capacitor has terminals one of which is connected to the count transistor. The vertical scanning circuit is configured to be able to supply different levels of voltages to the other terminals of the capacitors.
