US Patent Application 18448222. Silicon Nitride Sintered Body, Wear-Resistant Member, And Method For Manufacturing Silicon Nitride Sintered Body simplified abstract
Silicon Nitride Sintered Body, Wear-Resistant Member, And Method For Manufacturing Silicon Nitride Sintered Body
Organization Name
Inventor(s)
Kazuya Ookubo of Fujisawa Kanagawa (JP)
Silicon Nitride Sintered Body, Wear-Resistant Member, And Method For Manufacturing Silicon Nitride Sintered Body - A simplified explanation of the abstract
This abstract first appeared for US patent application 18448222 titled 'Silicon Nitride Sintered Body, Wear-Resistant Member, And Method For Manufacturing Silicon Nitride Sintered Body
Simplified Explanation
- The patent application describes a silicon nitride sintered body that consists of silicon nitride crystal grains and a grain boundary phase. - Raman spectroscopy is used to analyze a specific region in the central cross section of the silicon nitride sintered body. - The Raman spectroscopy detects two or more peaks in the ranges of 780 cm to 810 cm and 1340 cm to 1370 cm. - Additionally, four to six peaks are detected in the ranges of 170 cm to 190 cm, 607 cm to 627 cm, 720 cm to 740 cm, and 924 cm to 944 cm.
Original Abstract Submitted
According to an embodiment, a silicon nitride sintered body includes silicon nitride crystal grains and a grain boundary phase, and in a case where Raman spectroscopy of a 20 μm×20 μm region in a central cross section of the silicon nitride sintered body is performed, two or more peaks are detected in ranges of 780 cmto 810 cmand 1340 cmto 1370 cm, and four to six peaks are detected in ranges of 170 cmto 190 cm, 607 cmto 627 cm, 720 cmto 740 cm, and 924 cmto 944 cm.
