US Patent Application 18448046. METHOD OF MAKING PHOTONIC DEVICE simplified abstract

METHOD OF MAKING PHOTONIC DEVICE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Chien-Ying Wu of Hsinchu (TW)

Yuehying Lee of Hsinchu (TW)

Sui-Ying Hsu of Hsinchu (TW)

Chen-Hao Huang of Hsinchu (TW)

Chien-Chang Lee of Hsinchu (TW)

Chia-Ping Lai of Hsinchu (TW)

METHOD OF MAKING PHOTONIC DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18448046 titled 'METHOD OF MAKING PHOTONIC DEVICE

Simplified Explanation

The patent application describes a method for creating a photonic device.

• The method involves applying a cladding layer over a silicon layer.
• The cladding layer is then patterned to expose a portion of the silicon layer, while another portion remains covered by the patterned cladding layer.
• A waveguide portion is formed in the second portion of the silicon layer.
• A low refractive index layer is then deposited directly over the patterned cladding layer.
• The refractive index of the low refractive index layer is lower than that of silicon nitride.

Original Abstract Submitted

A method of making a photonic device includes depositing a cladding layer over a silicon layer. The method further includes patterning the cladding layer to expose a first portion of the silicon layer, wherein a second portion of the silicon layer is covered by the patterned cladding layer, and a waveguide portion is in the second portion of the silicon layer. The method further includes depositing a low refractive index layer directly over the patterned cladding layer, wherein a refractive index of the low refractive index layer is less than a refractive index of silicon nitride.