US Patent Application 18447943. Plasma-Assisted Etching Of Metal Oxides simplified abstract
Contents
Plasma-Assisted Etching Of Metal Oxides
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chansyun David Yang of Shinchu (TW)
Keh-Jeng Chang of Hsinchu (TW)
Chan-Lon Yang of Taipei City (TW)
Plasma-Assisted Etching Of Metal Oxides - A simplified explanation of the abstract
This abstract first appeared for US patent application 18447943 titled 'Plasma-Assisted Etching Of Metal Oxides
Simplified Explanation
- The patent application describes methods and systems for using plasma to etch a metal oxide. - The method involves modifying the surface of the metal oxide using a first gas. - A top portion of the metal oxide is then removed through a ligand exchange reaction. - Finally, the surface of the metal oxide is cleaned using a second gas.
Original Abstract Submitted
The present disclosure describes methods and systems for plasma-assisted etching of a metal oxide. The method includes modifying a surface of the metal oxide with a first gas, removing a top portion of the metal oxide by a ligand exchange reaction, and cleaning the surface of the metal oxide with a second gas.
