US Patent Application 18447927. SEMICONDUCTOR DEVICE HAVING A THERMAL CONTACT AND METHOD OF MAKING simplified abstract

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SEMICONDUCTOR DEVICE HAVING A THERMAL CONTACT AND METHOD OF MAKING

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Jian Wu of Hsinchu (TW)]]

[[Category:Feng Han of Hsinchu (TW)]]

[[Category:Shuai Zhang of Hsinchu (TW)]]

SEMICONDUCTOR DEVICE HAVING A THERMAL CONTACT AND METHOD OF MAKING - A simplified explanation of the abstract

This abstract first appeared for US patent application 18447927 titled 'SEMICONDUCTOR DEVICE HAVING A THERMAL CONTACT AND METHOD OF MAKING

Simplified Explanation

The patent application describes an integrated circuit that includes a substrate and a semiconductor material layer.

  • The integrated circuit has a first source structure, which includes a first doped well, and a drain structure, which includes a second doped well.
  • There is also a second source structure, which includes a third doped well. The drain structure is positioned between the first and second source structures.
  • The integrated circuit includes a first deep trench isolation (DTI) that extends through the first doped well.
  • Additionally, there is a first thermal contact that extends through the first DTI and is in direct contact with the substrate.
  • The first DTI is located between the thermal contact and the first doped well.


Original Abstract Submitted

An integrated circuit includes a substrate and a semiconductor material layer over the substrate. The integrated circuit includes a first source structure in the semiconductor material layer. The first source structure includes a first doped well. The integrated circuit includes a drain structure in the semiconductor material layer. The drain structure includes a second doped well. The integrated circuit includes a second source structure in the semiconductor material layer. The second source structure includes a third doped well. The drain structure is between the first source structure and the second source structure. The integrated circuit includes a first deep trench isolation (DTI) extending through the first doped well; and a first thermal contact extending through the first DTI. The thermal contact is in direct contact with the substrate. The first DTI is between the thermal contact and the first doped well.

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