US Patent Application 18447722. BACK-END-OF-LINE PASSIVE DEVICE STRUCTURE simplified abstract

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BACK-END-OF-LINE PASSIVE DEVICE STRUCTURE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Tsung-Chieh Hsiao of Changhua County (TW)]]

[[Category:Hsiang-Ku Shen of Hsinchu City (TW)]]

[[Category:Yuan-Yang Hsiao of Hsinchu (TW)]]

[[Category:Chen-Chiu Huang of Hsinchu (TW)]]

[[Category:Dian-Hau Chen of Hsinchu (TW)]]

BACK-END-OF-LINE PASSIVE DEVICE STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18447722 titled 'BACK-END-OF-LINE PASSIVE DEVICE STRUCTURE

Simplified Explanation

The abstract describes a device structure that includes multiple conductor plate layers and a passivation layer. The layers are arranged in a specific configuration to reduce leakage and breakdown caused by corner discharge effect in a back-end-of-line passive device.

  • The device structure includes a passivation layer, which acts as a protective barrier.
  • There are four conductor plate layers in total, with each layer enclosing the one below it.
  • The first conductor plate layer is located on top of the passivation layer.
  • The second conductor plate layer is placed over the first conductor layer and encloses it.
  • The third conductor plate layer is positioned over the second conductor layer.
  • The fourth conductor plate layer is placed over the third conductor layer and encloses it.
  • This specific arrangement of conductor plate layers helps to reduce leakage and breakdown caused by corner discharge effect.
  • The device structure is particularly useful in back-end-of-line passive devices, which are commonly used in integrated circuits.


Original Abstract Submitted

A device structure according to the present disclosure includes a passivation layer, a first conductor plate layer disposed on the passivation layer, a second conductor plate layer disposed over the first conductor layer, a third conductor plate layer disposed over the second conductor layer, and a fourth conductor plate layer disposed over the third conductor layer. The second conductor plate layer encloses the first conductor plate layer and the fourth conductor plate layer encloses the third conductor plate layer. The device structure, when used in a back-end-of-line passive device, reduces leakage and breakdown due to corner discharge effect.

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