METHOD OF MANUFACTURING INTEGRATED CIRCUIT

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METHOD OF MANUFACTURING INTEGRATED CIRCUIT - A simplified explanation of the abstract

This abstract first appeared for US patent application 18447572 titled 'METHOD OF MANUFACTURING INTEGRATED CIRCUIT

Simplified Explanation

The patent application describes a method for forming a transistor stack on a substrate.

The transistor stack consists of two transistors of different conductivity types, with the second transistor placed above the first transistor.
A first metal layer is formed above the transistor stack, which includes several conductive lines.
These conductive lines include a power line to supply power to the transistor stack, signal lines to transmit signals to the transistor stack, and a shielding line to protect the transmitted signals.
The signal lines are positioned between the power line and the shielding line.

Original Abstract Submitted

A method includes forming a first transistor stack over a substrate. The first transistor stack includes: a first transistor of a first conductivity type, and a second transistor of a second conductivity type different from the first conductivity type. The second transistor is above the first transistor. A plurality of first conductive lines is formed in a first metal layer above the first transistor stack. The plurality of first conductive lines includes, over the first transistor stack, a power conductive line configured to route power to the first transistor stack, one or more signal conductive lines configured to route one or more signals to the first transistor stack, and a shielding conductive line configured to shield the routed one or more signals. The one or more signal conductive lines are between the power conductive line and the shielding conductive line.

US Patent Application 18447572. METHOD OF MANUFACTURING INTEGRATED CIRCUIT simplified abstract

Contents

METHOD OF MANUFACTURING INTEGRATED CIRCUIT

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