US Patent Application 18447568. PHOTORESIST MATERIALS AND ASSOCIATED METHODS simplified abstract
Contents
PHOTORESIST MATERIALS AND ASSOCIATED METHODS
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Ming-Hui Weng of New Taipei City (TW)
Ching-Yu Chang of Yilang County (TW)
PHOTORESIST MATERIALS AND ASSOCIATED METHODS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18447568 titled 'PHOTORESIST MATERIALS AND ASSOCIATED METHODS
Simplified Explanation
- The patent application describes photoresist materials that contain tin clusters with different types of ligands. - One example is a photoresist material with tin clusters that have two or more carboxylate ligands. - Another example is a photoresist material with tin oxide clusters that have carbonate ligands. - These different types of ligands help prevent the photoresist materials from crystallizing. - This can improve the coating performance of the photoresist materials and reduce the surface roughness of photoresist layers.
Original Abstract Submitted
Photoresist materials described herein may include various types of tin (Sn) clusters having one or more types of ligands. As an example, a photoresist material described herein may include tin clusters bearing two or more different types of carboxylate ligands. As another example, a photoresist material described herein may include tin oxide clusters that include carbonate ligands. The two or more different types of carboxylate ligands and the carbonate ligands may reduce, minimize, and/or prevent crystallization of the photoresist materials described herein, which may increase the coating performance of the photoresist materials and may decrease the surface roughness of photoresist layers formed using the photoresist materials described herein.
