US Patent Application 18447428. Semiconductor Package and Method of Forming Thereof simplified abstract
Contents
Semiconductor Package and Method of Forming Thereof
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Jiun Yi Wu of Zhongli City (TW)
Semiconductor Package and Method of Forming Thereof - A simplified explanation of the abstract
This abstract first appeared for US patent application 18447428 titled 'Semiconductor Package and Method of Forming Thereof
Simplified Explanation
The patent application describes a method of forming a semiconductor device.
- The method involves attaching a first local interconnect component to a first substrate using a first adhesive.
- A first redistribution structure is then formed over a first side of the first local interconnect component.
- The first local interconnect component and the first redistribution structure are removed from the first substrate and attached to a second substrate.
- The first adhesive is removed from the first local interconnect component.
- An interconnect structure is formed over a second side of the first local interconnect component and the first encapsulant, with a first conductive feature of the interconnect structure being physically and electrically coupled to a second conductive feature of the first local interconnect component.
Original Abstract Submitted
A method of forming a semiconductor device includes attaching a first local interconnect component to a first substrate with a first adhesive, forming a first redistribution structure over a first side of the first local interconnect component, and removing the first local interconnect component and the first redistribution structure from the first substrate and attaching the first redistribution structure to a second substrate. The method further includes removing the first adhesive from the first local interconnect component and forming an interconnect structure over a second side of the first local interconnect component and the first encapsulant, the second side being opposite the first side. A first conductive feature of the interconnect structure is physically and electrically coupled to a second conductive feature of the first local interconnect co