US Patent Application 18447389. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE simplified abstract
Contents
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Wei-Chih Chen of Taipei City (TW)
Sih-Hao Liao of New Taipei City (TW)
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18447389 titled 'SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE
Simplified Explanation
- The patent application describes a passivation layer and conductive via that improve the transmittance of imaging energy within the passivation layer material. - The increased transmittance allows for better control over the contours of openings formed in the passivation layer. - Once the openings are formed, conductive vias can be created within them. - The innovation aims to enhance the performance and functionality of passivation layers and conductive vias in electronic devices.
Original Abstract Submitted
A passivation layer and conductive via are provided, wherein the transmittance of an imaging energy is increased within the material of the passivation layer. The increase in transmittance allows for a greater cross-linking that helps to increase control over the contours of openings formed within the passivation layer. Once the openings are formed, the conductive vias can be formed within the openings.
