US Patent Application 18447340. PIXEL SENSOR INCLUDING A TRANSFER FINFET simplified abstract

PIXEL SENSOR INCLUDING A TRANSFER FINFET

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Feng-Chien Hsieh of Pingtung City (TW)]]

[[Category:Yun-Wei Cheng of Taipei City (TW)]]

[[Category:Wei-Li Hu of Tainan City (TW)]]

[[Category:Kuo-Cheng Lee of Tainan City (TW)]]

[[Category:Cheng-Ming Wu of Tainan City (TW)]]

PIXEL SENSOR INCLUDING A TRANSFER FINFET - A simplified explanation of the abstract

This abstract first appeared for US patent application 18447340 titled 'PIXEL SENSOR INCLUDING A TRANSFER FINFET

Simplified Explanation

- The patent application describes a pixel sensor that uses a transfer fin field effect transistor (finFET) to transfer a photocurrent from a photodiode to a drain region. - The transfer finFET includes a photodiode, an extension region, multiple channel fins, and a transfer gate that controls the operation of the transfer finFET. - The transfer gate is wrapped around each of the channel fins, providing a larger surface area for controlling the transfer of electrons. - This larger surface area allows for greater control over the operation of the finFET, resulting in faster switching times and improved performance of the pixel sensor. - Additionally, the design of the transfer finFET may help reduce leakage current compared to traditional planar transfer transistors.

Original Abstract Submitted

A pixel sensor includes a transfer fin field effect transistor (finFET) to transfer a photocurrent from a photodiode to a drain region. The transfer finFET includes at least a portion of the photodiode, an extension region associated with the drain region, a plurality of channel fins, and a transfer gate at least partially surrounding the channel fins to control the operation of the transfer finFET. In the transfer finFET, the transfer gate is wrapped around (e.g., at least three sides) of each of the channel fins, which provides a greater surface area over which the transfer gate is enabled to control the transfer of electrons. The greater surface area results in greater control over operation of the finFET, which may reduce switching times of the pixel sensor (which enables faster pixel sensor performance) and may reduce leakage current of the pixel sensor relative to a planar transfer transistor.