US Patent Application 18447194. METHOD OF MAKING DECOUPLING CAPACITOR simplified abstract

METHOD OF MAKING DECOUPLING CAPACITOR

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Szu-Lin Liu of Hsinchu (TW)]]

[[Category:Jaw-Juinn Horng of Hsinchu (TW)]]

METHOD OF MAKING DECOUPLING CAPACITOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 18447194 titled 'METHOD OF MAKING DECOUPLING CAPACITOR

Simplified Explanation

The patent application describes a method for implanting dopants into a substrate to create source/drain (S/D) regions and a channel region in a semiconductor device.

• The first step is implanting a first dopant into the substrate to define the S/D regions.
• Then, a second dopant of the same type as the first dopant is implanted into the substrate to define the channel region between the S/D regions.
• The concentration of the second dopant in the channel region is intentionally kept less than half of the concentration of the first dopant in each S/D region.
• A gate stack is then formed over the channel region, which helps control the flow of current in the device.
• Finally, all the S/D regions are electrically connected together to ensure proper functionality of the device.

Original Abstract Submitted

A method includes implanting a first dopant having a first dopant type into a substrate to define a plurality of source/drain (S/D) regions. The method further includes implanting a second dopant having the first dopant type into the substrate to define a channel region between adjacent S/D regions of the plurality of S/D regions, wherein a dopant concentration of the second dopant in the channel region is less than half of a dopant concentration of the first dopant in each of the plurality of S/D regions. The method further includes forming a gate stack over the channel region. The method further includes electrically coupling each of the plurality of S/D regions together.