US Patent Application 18446684. ANTI-FUSE ARRAY simplified abstract
Contents
ANTI-FUSE ARRAY
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Meng-Sheng Chang of Hsinchu (TW)
Chen-Ming Hung of Hsinchu (TW)
ANTI-FUSE ARRAY - A simplified explanation of the abstract
This abstract first appeared for US patent application 18446684 titled 'ANTI-FUSE ARRAY
Simplified Explanation
The abstract describes an anti-fuse array design for a patent application.
- The anti-fuse array consists of four adjacent anti-fuse bit columns.
- The first and second columns contain anti-fuse bits that are part of a first active area column.
- The third and fourth columns contain anti-fuse bits that are part of a second active area column.
- There are two sets of conductive segment rows in the array.
- The first set has rows with three conductive segments positioned between adjacent active areas of the first and second active area columns.
- The second set alternates with the first set and has rows with four conductive segments positioned between adjacent active areas of the first and second active area columns.
Original Abstract Submitted
An anti-fuse array includes first through fourth adjacent anti-fuse bit columns, the anti-fuse bits of the first and second anti-fuse bit columns including portions of active areas of a first active area column, and the anti-fuse bits of the third and fourth anti-fuse bit columns including portions of active areas of a second active area column. Each row of a first set of conductive segment rows includes first and second conductive segments positioned between adjacent active areas of the first active area column and a third conductive segment positioned between adjacent active areas of the second active area column. Each row of a second set of conductive segments alternating with the first set of conductive segment rows includes a fourth conductive segment positioned between adjacent active areas of the first active area column and fifth and sixth conductive segments positioned between adjacent active areas of the second active area column.
