US Patent Application 18446593. MULTI-LAYER HIGH-K GATE DIELECTRIC STRUCTURE simplified abstract

MULTI-LAYER HIGH-K GATE DIELECTRIC STRUCTURE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Chih-Yu Hsu of Hsinchu County (TW)

Jian-Hao Chen of Hsinchu City (TW)

Chia-Wei Chen of Hsinchu (TW)

Shan-Mei Liao of Hsinchu (TW)

Hui-Chi Chen of Hsinchu County (TW)

Yu-Chia Liang of Hsinchu (TW)

Shih-Hao Lin of Hsinchu (TW)

Kuei-Lun Lin of Hsinchu (TW)

Kuo-Feng Yu of Hsinchu County (TW)

Feng-Cheng Yang of Hsinchu County (TW)

Yen-Ming Chen of Hsin-Chu County (TW)

MULTI-LAYER HIGH-K GATE DIELECTRIC STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18446593 titled 'MULTI-LAYER HIGH-K GATE DIELECTRIC STRUCTURE

Simplified Explanation

The patent application describes a transistor with a gate structure consisting of two layers of dielectric material.

• The first layer, called the first gate dielectric layer, is placed on top of the substrate and contains a dielectric material with a certain dielectric constant.
• The second layer, called the second gate dielectric layer, is placed on top of the first layer and contains a different dielectric material with a higher dielectric constant.
• Both dielectric materials have a higher dielectric constant than silicon oxide, which is commonly used in transistors.
• The use of these two layers with different dielectric constants in the gate structure of the transistor is the innovation described in the patent application.

Original Abstract Submitted

A transistor includes a gate structure that has a first gate dielectric layer and a second gate dielectric layer. The first gate dielectric layer is disposed over the substrate. The first gate dielectric layer contains a first type of dielectric material that has a first dielectric constant. The second gate dielectric layer is disposed over the first gate dielectric layer. The second gate dielectric layer contains a second type of dielectric material that has a second dielectric constant. The second dielectric constant is greater than the first dielectric constant. The first dielectric constant and the second dielectric constant are each greater than a dielectric constant of silicon oxide.