US Patent Application 18446586. Memory Device and Methods of Forming Same simplified abstract
Contents
Memory Device and Methods of Forming Same
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chenchen Jacob Wang of Hsinchu (TW)
Memory Device and Methods of Forming Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 18446586 titled 'Memory Device and Methods of Forming Same
Simplified Explanation
The patent application describes a semiconductor device that includes a memory cell in a memory array.
- The memory cell consists of two access transistors, each with a bottom electrode, a conductive gate, a channel region, and a top electrode.
- The access transistors are located in a first dielectric layer over a substrate.
- The conductive gate is in a second dielectric layer, which is positioned over the bottom electrode and the first dielectric layer.
- The channel region extends through the conductive gate to make contact with the bottom electrode.
- The top electrode is placed over the channel region.
- The described device aims to improve the functionality and performance of memory cells in semiconductor devices.
Original Abstract Submitted
In an embodiment, a semiconductor device includes a first dielectric layer over a substrate and a first access transistor and a second access transistor in a memory cell of a memory array, the first access transistor and the second access transistor each including a bottom electrode in the first dielectric layer, a conductive gate in a second dielectric layer, where the second dielectric layer is over the bottom electrode and the first dielectric layer, a channel region extending through the conductive gate to contact the bottom electrode, and a top electrode over the channel region.
