US Patent Application 18446183. Semiconductor Device with Air Gaps and Method of Fabrication Thereof simplified abstract

Semiconductor Device with Air Gaps and Method of Fabrication Thereof

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Chia-Hao Chang of Hsinchu City (TW)

Lin-Yu Huang of Hsinchu (TW)

Li-Zhen Yu of Hsinchu (TW)

Cheng-Chi Chuang of New Taipei City (TW)

Kuan-Lun Cheng of Hsin-Chu (TW)

Chih-Hao Wang of Hsinchu County (TW)

Semiconductor Device with Air Gaps and Method of Fabrication Thereof - A simplified explanation of the abstract

This abstract first appeared for US patent application 18446183 titled 'Semiconductor Device with Air Gaps and Method of Fabrication Thereof

Simplified Explanation

The patent application describes a semiconductor structure that includes various components such as epitaxial features, a semiconductor channel layer, a gate structure, a backside metal wiring layer, and a backside conductive contact.

• The semiconductor structure has first and second epitaxial features, a semiconductor channel layer, and a gate structure at the frontside.
• A backside metal wiring layer is present at the backside of the semiconductor structure.
• A backside conductive contact connects the first epitaxial feature to the backside metal wiring layer.
• There is an air gap between the backside metal wiring layer and the gate structure.

Original Abstract Submitted

A semiconductor structure includes first and second epitaxial features, at least one semiconductor channel layer connecting the first and second epitaxial features, and a gate structure engaging the semiconductor channel layer. The first and second epitaxial features, the semiconductor channel layer, and the gate structure are at a frontside of the semiconductor structure. The semiconductor structure also includes a backside metal wiring layer at a backside of the semiconductor structure, and a backside conductive contact electrically connecting the first epitaxial feature to the backside metal wiring layer. The backside metal wiring layer is spaced away from the gate structure with an air gap therebetween.