US Patent Application 18366859. SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18366859 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a display device with thin film transistors (TFT) that use an oxide semiconductor film, a gate electrode, and an insulating film.
- The TFT includes two aluminum oxide films between the insulating film and the gate electrode.
- The first aluminum oxide film has a higher oxygen concentration than the second aluminum oxide film.
- This arrangement helps improve the performance and stability of the display device.
- The use of oxide semiconductor film and aluminum oxide films enhances the efficiency and durability of the display device.
- The invention provides a solution for creating high-quality display devices with improved functionality.
Original Abstract Submitted
A display device including a substrate having thin film transistors (TFT) comprising: the TFT including an oxide semiconductor film, a gate electrode and an insulating film formed between the oxide semiconductor film and the gate electrode, wherein a first aluminum oxide film and a second aluminum oxide film, which is formed on the first aluminum oxide film, are formed between the insulating film and the gate electrode, an oxygen concentration in the first aluminum oxide film is bigger than an oxygen concentration in the second aluminum oxide film.
