US Patent Application 18366763. FinFET Device and Method of Forming Same simplified abstract

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FinFET Device and Method of Forming Same

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Chien Lin of Hsinchu (TW)

Kun-Yu Lee of Miaoli County (TW)

Shahaji B. More of Hsinchu (TW)

Cheng-Han Lee of New Taipei City (TW)

Shih-Chieh Chang of Taipei City (TW)

FinFET Device and Method of Forming Same - A simplified explanation of the abstract

This abstract first appeared for US patent application 18366763 titled 'FinFET Device and Method of Forming Same

Simplified Explanation

The patent application describes a method for forming a semiconductor device.

  • The method involves patterning a substrate to create a strip made of a first semiconductor material.
  • An isolation region is then formed along one side of the strip, with the upper portion of the strip extending above the isolation region.
  • A dummy structure is formed along the sidewalls and top surface of the upper portion of the strip.
  • A first etching process is performed on the exposed portion of the upper strip, creating a first recess.
  • The first recess is then reshaped to have a V-shaped bottom surface using a second etching process.
  • The second etching process selectively targets specific crystalline planes.
  • Finally, a source/drain region is epitaxially grown in the reshaped first recess.


Original Abstract Submitted

A method for forming a semiconductor device includes patterning a substrate to form a strip including a first semiconductor material, forming an isolation region along a sidewall of the strip, an upper portion of the strip extending above the isolation region, forming a dummy structure along sidewalls and a top surface of the upper portion of the strip, performing a first etching process on an exposed portion of the upper portion of the strip to form a first recess, the exposed portion of the strip being exposed by the dummy structure, after performing the first etching process, reshaping the first recess to have a V-shaped bottom surface using a second etching process, wherein the second etching process is selective to first crystalline planes having a first orientation relative to second crystalline planes having a second orientation, and epitaxially growing a source/drain region in the reshaped first recess.

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