US Patent Application 18366596. 3D CAPACITOR AND METHOD OF MANUFACTURING SAME simplified abstract

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3D CAPACITOR AND METHOD OF MANUFACTURING SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Chi-Wen Liu of Hsinchu (TW)]]

[[Category:Chao-Hsiung Wang of Hsin-Chu City (TW)]]

3D CAPACITOR AND METHOD OF MANUFACTURING SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18366596 titled '3D CAPACITOR AND METHOD OF MANUFACTURING SAME

Simplified Explanation

The patent application describes a device that includes a substrate with a low-resistance top surface and a fin structure consisting of two fins.

  • The fins have low-resistance surfaces on the top and sides.
  • An insulation material is placed over the substrate and between the two fins.
  • The top surface and a portion of the side surfaces of each fin are exposed above the insulation material.
  • A dielectric layer is applied over the insulation material and is in direct contact with the exposed surfaces of the fins.
  • A first electrode is in direct contact with the top surface of the first fin.
  • A second electrode is placed over the dielectric layer and is in contact with the top surface of the second fin.


Original Abstract Submitted

A device includes a substrate including a low-resistance top surface and a fin structure including a first fin and a second fin. Each of the first and second fins includes a low-resistance fin-top surface and two low-resistance sidewall surfaces. The device includes an insulation material over the top surface of the substrate and between the first fin and the second fin. The fin-top surface and a first portion of the sidewall surfaces of each of the first and the second fins are above the insulation material. The device further includes a dielectric layer over the insulation material and in direct contact with the fin-top surface and the first portion of the sidewall surfaces of each of the first and the second fins; a first electrode in direct contact with the fin-top surface of the first fin; and a second electrode over the dielectric layer that is over the second fin.

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