US Patent Application 18366352. Interconnect Features With Sharp Corners and Method Forming Same simplified abstract
Contents
Interconnect Features With Sharp Corners and Method Forming Same
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Interconnect Features With Sharp Corners and Method Forming Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 18366352 titled 'Interconnect Features With Sharp Corners and Method Forming Same
Simplified Explanation
- The patent application describes a method for forming conductive features on a dielectric layer. - The method involves depositing a dielectric layer and then placing mandrel strips on top of it. - Spacers are formed on the sidewalls of the mandrel strips, creating mask groups. - Each mask group consists of a mandrel strip and two spacers. - A mask strip is formed to connect neighboring mask groups. - The mask groups and mask strip collectively serve as an etching mask to create trenches in the dielectric layer. - The trenches are then filled with a conductive material to form the desired conductive features.
Original Abstract Submitted
A method includes depositing a dielectric layer, depositing a plurality of mandrel strips over the dielectric layer, and forming a plurality of spacers on sidewalls of the plurality of mandrel strips to form a plurality of mask groups. Each of the plurality of mandrel strips and two of the plurality of spacers form a mask group in the plurality of mask groups. The method further includes forming a mask strip connecting two neighboring mask groups in the plurality of mask groups, using the plurality of mask groups and the mask strip collectively as an etching mask to etch the dielectric layer and to form trenches in the dielectric layer, and filling a conductive material into the trenches to form a plurality of conductive features.
