US Patent Application 18366092. EUV PHOTOLITHOGRAPHY SYSTEM FUEL SOURCE AND METHODS OF OPERATING THE SAME simplified abstract

EUV PHOTOLITHOGRAPHY SYSTEM FUEL SOURCE AND METHODS OF OPERATING THE SAME

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Cheng-Hao Lai of Hsinchu (TW)

Ming-Hsun Tsai of Hsinchu (TW)

Hsin-Feng Chen of Hsinchu (TW)

Wei-Shin Cheng of Hsinchu (TW)

Yu-Kuang Sun of Hsinchu (TW)

Cheng-Hsuan Wu of Hsinchu (TW)

Yu-Fa Lo of Hsinchu (TW)

Shih-Yu Tu of Hsinchu (TW)

Jou-Hsuan Lu of Hsinchu (TW)

Shang-Chieh Chien of Hsinchu (TW)

Li-Jui Chen of Hsinchu (TW)

Heng-Hsin Liu of Hsinchu (TW)

EUV PHOTOLITHOGRAPHY SYSTEM FUEL SOURCE AND METHODS OF OPERATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18366092 titled 'EUV PHOTOLITHOGRAPHY SYSTEM FUEL SOURCE AND METHODS OF OPERATING THE SAME

Simplified Explanation

The abstract of this patent application describes a method for removing impurities from a liquefied solid fuel used in a droplet generator of an extreme ultraviolet photolithography system. This removal process improves the stability and predictability of droplet formation, leading to positive impacts on wafer yield and the lifetime of the droplet generator.

• Impurities in a liquefied solid fuel used in a droplet generator are removed.
• The removal of impurities enhances the stability and predictability of droplet formation.
• The improved droplet formation positively affects wafer yield in extreme ultraviolet photolithography.
• The removal process also extends the lifetime of the droplet generator.
• This patent application focuses on the removal of impurities to optimize the performance of the droplet generator in extreme ultraviolet photolithography systems.

Original Abstract Submitted

Impurities in a liquefied solid fuel utilized in a droplet generator of an extreme ultraviolet photolithography system are removed from vessels containing the liquefied solid fuel. Removal of the impurities increases the stability and predictability of droplet formation which positively impacts wafer yield and droplet generator lifetime.