US Patent Application 18365749. EXTREME ULTRAVIOLET MASK WITH ALLOY BASED ABSORBERS simplified abstract

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EXTREME ULTRAVIOLET MASK WITH ALLOY BASED ABSORBERS

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Pei-Cheng Hsu of Hsinchu (TW)

Ping-Hsun Lin of Hsinchu (TW)

Ta-Cheng Lien of Hsinchu (TW)

Hsin-Chang Lee of Hsinchu (TW)

EXTREME ULTRAVIOLET MASK WITH ALLOY BASED ABSORBERS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18365749 titled 'EXTREME ULTRAVIOLET MASK WITH ALLOY BASED ABSORBERS

Simplified Explanation

The patent application describes an extreme ultraviolet mask that includes a substrate, a reflective multilayer stack, and a multi-layer patterned absorber layer.

  • The absorber layer is made of an alloy that includes elements such as ruthenium, chromium, platinum, gold, iridium, titanium, niobium, rhodium, molybdenum, tungsten, or palladium.
  • The alloying element in the absorber layer can be ruthenium, chromium, tantalum, platinum, gold, iridium, titanium, niobium, rhodium, molybdenum, hafnium, boron, nitrogen, silicon, zirconium, or vanadium.
  • The multi-layer patterned absorber structure has layers with different compositions.
  • The invention aims to improve the performance and efficiency of extreme ultraviolet masks used in various applications.


Original Abstract Submitted

An extreme ultraviolet mask including a substrate, a reflective multilayer stack on the substrate and a multi-layer patterned absorber layer on the reflective multilayer stack is provided. Disclosed embodiments include an absorber layer that includes an alloy comprising ruthenium (Ru), chromium (Cr), platinum (Pt), gold (Au), iridium (Ir), titanium (Ti), niobium (Nb), rhodium (Rh), molybdenum (Mo), tungsten (W) or palladium (Pd), and at least one alloying element. The at least one alloying element includes ruthenium (Ru), chromium (Cr), tantalum (Ta), platinum (Pt), gold (Au), iridium (Ir), titanium (Ti), niobium (Nb), rhodium (Rh), molybdenum (Mo), hafnium (Hf), boron (B), nitrogen (N), silicon (Si), zirconium (Zr) or vanadium (V). Other embodiments include a multi-layer patterned absorber structure with layers that include an alloy and an alloying element, where at least two of the layers of the multi-layer structure have different compositions.