US Patent Application 18365420. SEMICONDUCTOR DEVICE AND METHOD simplified abstract
Contents
SEMICONDUCTOR DEVICE AND METHOD
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Shiang-Bau Wang of Pingzchen City (TW)
Chen-Huang Huang of Hsinchu (TW)
Ryan Chia-Jen Chen of Hsinchu (TW)
SEMICONDUCTOR DEVICE AND METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18365420 titled 'SEMICONDUCTOR DEVICE AND METHOD
Simplified Explanation
The patent application describes a device with a specific structure and configuration. Here is a simplified explanation of the abstract:
- The device includes a fin that extends from a substrate.
- A gate stack is placed on the fin, which controls the flow of current in the device.
- A source/drain region is located in the fin, allowing for the input and output of current.
- A contact etch stop layer (CESL) is positioned over the source/drain region, providing protection.
- A gate spacer runs along the side of the gate stack, further enhancing the device's functionality.
- A dielectric plug is placed between the CESL and the gate spacer, creating a void that physically separates the gate stack from the source/drain region.
- This configuration helps improve the performance and reliability of the device.
Original Abstract Submitted
In an embodiment, a device includes: a first fin extending from a substrate; a gate stack disposed on the first fin; a source/drain region disposed in the first fin; a contact etch stop layer (CESL) disposed over the source/drain region; a gate spacer extending along a side of the gate stack; and a dielectric plug disposed between the CESL and the gate spacer, where the dielectric plug, the CESL, the gate spacer, and the source/drain region collectively define a void physically separating the gate stack from the source/drain region.
