US Patent Application 18364702. MICROELECTROMECHANICAL SYSTEMS DEVICE HAVING A MECHANICALLY ROBUST ANTI-STICTION/OUTGASSING STRUCTURE simplified abstract

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MICROELECTROMECHANICAL SYSTEMS DEVICE HAVING A MECHANICALLY ROBUST ANTI-STICTION/OUTGASSING STRUCTURE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.


Inventor(s)

Kuei-Sung Chang of Kaohsiung City (TW)

Chun-Wen Cheng of Zhubei City (TW)

Fei-Lung Lai of New Taipei City (TW)

Shing-Chyang Pan of Jhudong Township (TW)

Yuan-Chih Hsieh of Hsinchu City (TW)

Yi-Ren Wang of New Taipei City (TW)

MICROELECTROMECHANICAL SYSTEMS DEVICE HAVING A MECHANICALLY ROBUST ANTI-STICTION/OUTGASSING STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18364702 titled 'MICROELECTROMECHANICAL SYSTEMS DEVICE HAVING A MECHANICALLY ROBUST ANTI-STICTION/OUTGASSING STRUCTURE

Simplified Explanation

The abstract describes a microelectromechanical system (MEMS) device that includes a dielectric structure and a movable mass.

  • The MEMS device has a dielectric structure that partially defines a cavity.
  • A second semiconductor substrate is placed over the dielectric structure.
  • The second substrate has a movable mass with sidewalls that are positioned between the sidewalls of the cavity.
  • An anti-stiction structure made of a silicon-based semiconductor is placed between the movable mass and the dielectric structure.


Original Abstract Submitted

Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device. The MEMS device includes a dielectric structure disposed over a first semiconductor substrate, where the dielectric structure at least partially defines a cavity. A second semiconductor substrate is disposed over the dielectric structure. The second semiconductor substrate includes a movable mass, where opposite sidewalls of the movable mass are disposed between opposite sidewall of the cavity. An anti-stiction structure is disposed between the movable mass and the dielectric structure, where the anti-stiction structure is a first silicon-based semiconductor.


Category:B81B3/00 Category:B81C1/00

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