US Patent Application 18364588. Warm Wafer After Ion Cryo-Implantation simplified abstract
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Contents
Warm Wafer After Ion Cryo-Implantation
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Tien-Shun Chang of New Taipei (TW)
Chun-Feng Nieh of Hsinchu (TW)
Warm Wafer After Ion Cryo-Implantation - A simplified explanation of the abstract
This abstract first appeared for US patent application 18364588 titled 'Warm Wafer After Ion Cryo-Implantation
Simplified Explanation
The abstract of the patent application describes a process for ion cryo-implantation, which involves heating an implanted wafer under a heavy vacuum and then transferring it to load locks held at a lesser vacuum.
- Ion cryo-implantation process is utilized in the described embodiments.
- The implanted wafer is heated during a post implantation stage.
- The heating process takes place under a heavy vacuum.
- Load locks are used to transfer the heated wafer.
- The load locks are held at a lesser vacuum than the heavy vacuum.
- The process aims to improve the efficiency and effectiveness of ion cryo-implantation.
Original Abstract Submitted
Embodiments of an ion cryo-implantation process utilize a post implantation heating stage to heat the implanted wafer while under the heavy vacuum used during cryo-implantation. The implanted wafer is then transferred to load locks which are held at a lesser vacuum than the heavy vacuum.
