US Patent Application 18363901. MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR STRUCTURE, AND MEMORY simplified abstract
MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR STRUCTURE, AND MEMORY
Organization Name
CHANGXIN MEMORY TECHNOLOGIES, INC.
Inventor(s)
MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR STRUCTURE, AND MEMORY - A simplified explanation of the abstract
This abstract first appeared for US patent application 18363901 titled 'MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR STRUCTURE, AND MEMORY
Simplified Explanation
The patent application describes a manufacturing method for a semiconductor structure and a memory.
- The method involves providing a substrate with an array region, a core region, and a boundary region.
- A first isolation layer is formed in the array region and a second-part boundary region.
- A first conductive layer is formed in the core region and a first-part boundary region.
- The first conductive layer is planarized to create a flat top surface.
Original Abstract Submitted
The present application provides a manufacturing method of a semiconductor structure, a semiconductor structure, and a memory. The manufacturing method of a semiconductor structure includes: providing a substrate, where the substrate includes an array region, a core region, and a boundary region located between the array region and the core region; forming a first isolation layer, where the first isolation layer is located in the array region and a second-part boundary region adjacent to the array region; and forming a first conductive layer, where the first conductive layer is located in the core region and a first-part boundary region adjacent to the core region. The first conductive layer is planarized to obtain a flat top surface.
