US Patent Application 18363766. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract

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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Chien-Hung Chen of Taipei (TW)]]

[[Category:Shu-Shen Yeh of Taoyuan City (TW)]]

[[Category:Yu-Sheng Lin of Hsinchu County (TW)]]

[[Category:Po-Yao Lin of Hsinchu County (TW)]]

[[Category:Shin-Puu Jeng of Hsinchu (TW)]]

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18363766 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Simplified Explanation

The patent application describes a semiconductor device that includes a circuit substrate, at least one semiconductor die, a first frame, and a second frame.

  • The semiconductor die is connected to the circuit substrate.
  • The first frame is placed on the circuit substrate and surrounds the semiconductor die.
  • The second frame is stacked on top of the first frame.
  • The first frame consists of a base portion and an overhang portion.
  • The base portion has a certain width, while the overhang portion has a wider width.
  • The overhang portion extends laterally towards the semiconductor die compared to the base portion.
  • The widths of the base portion and the overhang portion are measured in the direction of the overhang portion's extension.


Original Abstract Submitted

A semiconductor device includes a circuit substrate, at least one semiconductor die, a first frame, and a second frame. The at least one semiconductor die is connected to the circuit substrate. The first frame is disposed on the circuit substrate and encircles the at least one semiconductor die. The second frame is stacked on the first frame. The first frame includes a base portion and an overhang portion. The base portion has a first width. The overhang portion is disposed on the base portion and has a second width greater than the first width. The overhang portion laterally protrudes towards the at least one semiconductor die with respect to the base portion. The first width and the second width are measured in a protruding direction of the overhang portion.

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