US Patent Application 18363458. Semiconductor Package and Methods of Forming the Same simplified abstract
Contents
Semiconductor Package and Methods of Forming the Same
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Sih-Hao Liao of New Taipei (TW)
Semiconductor Package and Methods of Forming the Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 18363458 titled 'Semiconductor Package and Methods of Forming the Same
Simplified Explanation
The patent application describes a method of forming a semiconductor device.
- The method involves applying a first dielectric layer to the front side of a wafer, which contains multiple dies.
- The first dielectric layer has a shrinkage ratio below a certain threshold.
- The first dielectric layer is then cured at a specific temperature, resulting in a smaller distance between the highest and lowest points of its upper surface.
- The wafer is thinned from the backside.
- Finally, a dicing process is performed to separate the individual dies.
Original Abstract Submitted
A method of forming a semiconductor device includes forming a first dielectric layer over a front side of a wafer, the wafer having a plurality of dies at the front side of the wafer, the first dielectric layer having a first shrinkage ratio smaller than a first pre-determined threshold; curing the first dielectric layer at a first temperature, where after curing the first dielectric layer, a first distance between a highest point of an upper surface of the first dielectric layer and a lowest point of the upper surface of the first dielectric layer is smaller than a second pre-determined threshold; thinning the wafer from a backside of the wafer; and performing a dicing process to separate the plurality of dies into individual dies.
