US Patent Application 18362946. INTEGRATED CIRCUIT STRUCTURE simplified abstract

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INTEGRATED CIRCUIT STRUCTURE

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Hui-Zhong Zhuang of Hsinchu (TW)

Ting-Wei Chiang of Hsinchu (TW)

Li-Chun Tien of Hsinchu (TW)

Shun Li Chen of Hsinchu (TW)

Lee-Chung Lu of Hsinchu (TW)

INTEGRATED CIRCUIT STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18362946 titled 'INTEGRATED CIRCUIT STRUCTURE

Simplified Explanation

The abstract describes an integrated circuit (IC) structure with specific features and components.

  • The IC structure includes a first cell, a first rail, and a second rail.
  • The first cell consists of a first and second active region and three gate structures.
  • The first active region has a first dopant type, while the second active region has a second dopant type.
  • The first gate structure extends in a second direction and overlaps either the first or second active region.
  • The second gate structure also extends in the second direction and overlaps the first edge of the first or second active region.
  • The third gate structure extends in the second direction and overlaps at least the second edge of the first or second active region.
  • The first rail extends in the first direction and overlaps the middle portion of the first active region.
  • The second rail extends in the first direction and overlaps the middle portion of the second active region.


Original Abstract Submitted

An IC structure includes a first cell and a first and second rail. The first cell includes a first and second active region and a first, a second and a third gate structure. The first active region having a first dopant type. The second active region having a second dopant type. The first gate structure extending in a second direction, overlapping the first or the second active region. The second gate structure extending in the second direction, and overlapping a first edge of the first or second active region. The third gate structure extending in the second direction, and overlapping at least a second edge of the first or second active region. The first rail extending in the first direction and overlapping a middle portion of the first active region. The second rail extending in the first direction and overlapping a middle portion of the second active region.

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