US Patent Application 18362866. IMAGE SENSOR DEVICE simplified abstract
Contents
IMAGE SENSOR DEVICE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Yun-Wei Cheng of Taipei City (TW)
Chun-Hao Chou of Tainan City (TW)
Kuo-Cheng Lee of Tainan City (TW)
IMAGE SENSOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18362866 titled 'IMAGE SENSOR DEVICE
Simplified Explanation
The patent application describes a device that includes multiple photodiode regions, transistors, deep trench isolation (DTI) structures, and isolation structures within a semiconductor substrate.
- The transistors are located on the front-side surface of the substrate.
- The DTI structures extend from the backside surface of the substrate into the substrate at a certain depth.
- The isolation structures also extend from the backside surface of the substrate into the substrate, but at a shallower depth compared to the DTI structures.
- The isolation structures have a triangular profile when viewed from the backside surface of the substrate.
Original Abstract Submitted
A device includes a plurality of photodiode regions within a semiconductor substrate, a plurality of transistors, a plurality of deep trench isolation (DTI) structures, and a plurality of isolation structures. The transistors are over a front-side surface of the semiconductor substrate. The DTI structures extend a first depth from a backside surface of the semiconductor substrate into the semiconductor substrate. The isolation structures extend a second depth from the backside surface of the semiconductor substrate into the semiconductor substrate. The second depth is less than the first depth. From a plan view, each of the plurality of isolation structures has a triangular profile at the backside surface of the semiconductor substrate.
