US Patent Application 18362731. THREE DIMENSIONAL INTEGRATED CIRCUIT AND FABRICATION THEREOF simplified abstract

THREE DIMENSIONAL INTEGRATED CIRCUIT AND FABRICATION THEREOF

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Chenming Hu of Oakland CA (US)

Shu-Jui Chang of Hsinchu County (TW)

Chen-Han Chou of Tainan City (TW)

Yen-Teng Ho of Hsinchu City (TW)

Chia-Hsing Wu of New Taipei City (TW)

Kai-Yu Peng of Miaoli County (TW)

Cheng-Hung Shen of New Taipei City (TW)

THREE DIMENSIONAL INTEGRATED CIRCUIT AND FABRICATION THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18362731 titled 'THREE DIMENSIONAL INTEGRATED CIRCUIT AND FABRICATION THEREOF

Simplified Explanation

The patent application describes a method for fabricating transistors using a 2D semiconductor material. Here are the key points:

• Transistors are formed on a substrate.
• An interconnect structure is formed over the transistors.
• A dielectric layer is formed over the interconnect structure.
• 2D semiconductor seeds are deposited on the dielectric layer.
• The 2D semiconductor seeds are annealed to improve their crystalline structure.
• An epitaxy process is used to grow multiple 2D semiconductor films from the seeds.
• Second transistors are formed on the grown 2D semiconductor films.

Overall, this method enables the fabrication of transistors using 2D semiconductor materials, which can offer improved performance and integration in electronic devices.

Original Abstract Submitted

A method includes following steps. First transistors are formed over a substrate. An interconnect structure is formed over the plurality of first transistors. A dielectric layer is formed over the interconnect structure. 2D semiconductor seeds are formed over the dielectric layer. The 2D semiconductor seeds are annealed. An epitaxy process is performed to laterally grow a plurality of 2D semiconductor films respectively from the plurality of 2D semiconductor seeds. Second transistors are formed on the plurality of 2D semiconductor films.