US Patent Application 18362223. MIM EFUSE MEMORY DEVICES AND FABRICATION METHOD THEREOF simplified abstract
Contents
MIM EFUSE MEMORY DEVICES AND FABRICATION METHOD THEREOF
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Meng-Sheng Chang of Chu-bei City (TW)
Chia-En Huang of Xinfeng Township (TW)
MIM EFUSE MEMORY DEVICES AND FABRICATION METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18362223 titled 'MIM EFUSE MEMORY DEVICES AND FABRICATION METHOD THEREOF
Simplified Explanation
The patent application describes a memory device that consists of multiple memory cells. Each memory cell is made up of an access transistor and a resistor connected in series. The resistors in the memory cells are formed as interconnect structures placed on top of a substrate. The access transistors of the memory cells are positioned opposite a first metallization layer that contains the interconnect structures.
- Memory device with multiple memory cells
- Each memory cell has an access transistor and a resistor in series
- Resistors are interconnect structures on top of a substrate
- Access transistors are located opposite a metallization layer containing the interconnect structures
Original Abstract Submitted
A memory device is disclosed. The memory device includes a plurality of memory cells, each of the memory cells including an access transistor and a resistor coupled to each other in series. The resistors of the memory cells are each formed as one of a plurality of interconnect structures disposed over a substrate. The access transistors of the memory cells are disposed opposite a first metallization layer containing the plurality of interconnect structures from the substrate.
