US Patent Application 18362121. SOURCE/DRAIN FEATURE SEPARATION STRUCTURE simplified abstract

SOURCE/DRAIN FEATURE SEPARATION STRUCTURE

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Shih-Wei Lin of Taipei City (TW)

SOURCE/DRAIN FEATURE SEPARATION STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18362121 titled 'SOURCE/DRAIN FEATURE SEPARATION STRUCTURE

Simplified Explanation

The patent application describes a structure and method for a waveguide with specific features.

• The waveguide consists of a cladding layer surrounding a core layer, which is placed on top of a substrate.
• There is a cavity in the substrate next to the waveguide, and a fiber is placed inside this cavity.
• An isolation space is also present in the substrate, located underneath the waveguide.
• The cladding layer has multiple holes near the core layer.

Original Abstract Submitted

Structures and methods including a waveguide having a cladding layer surrounding a core layer disposed over a substrate, a cavity extending into the substrate adjacent the waveguide, a fiber disposed in the cavity, and an isolation space extending into the substrate and disposed under the waveguide. A plurality of holes may extend through the cladding layer adjacent the core layer.