US Patent Application 18361953. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract
Contents
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==
[[Category:Chung-Liang Cheng of Changhua City (TW)]]
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18361953 titled 'SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
Simplified Explanation
The patent application describes a semiconductor structure that includes a logic device, a dielectric structure, and a memory device.
- The logic device is located on one side of the semiconductor structure, specifically on a carrier wafer.
- On the opposite side of the logic device, there is a dielectric structure.
- The dielectric structure serves as a foundation for a memory device that is formed on top of it.
Original Abstract Submitted
Some implementations described herein provide a semiconductor structure. The semiconductor structure may include a logic device disposed, at a first side of the logic device, on a carrier wafer of the semiconductor structure. The semiconductor structure may include a dielectric structure disposed on a second side of the logic device, the second side being opposite the first side. The semiconductor structure may include a memory device formed on the dielectric structure.
