US Patent Application 18361879. OPTICAL PROXIMITY CORRECTION AND PHOTOMASKS simplified abstract
Contents
OPTICAL PROXIMITY CORRECTION AND PHOTOMASKS
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Ken-Hsien Hsieh of Taipei City (TW)
Shih-Ming Chang of Hsinchu (TW)
Shuo-Yen Chou of Hualien County (TW)
Ru-Gun Liu of Hsinchu County (TW)
OPTICAL PROXIMITY CORRECTION AND PHOTOMASKS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18361879 titled 'OPTICAL PROXIMITY CORRECTION AND PHOTOMASKS
Simplified Explanation
The patent application describes a method for optimizing the fabrication of masks used in lithographic processes.
- The method involves receiving a layout for the mask and determining target contours for different lithographic process conditions.
- A modification is made to the layout and then simulated under different process conditions to generate simulated contours.
- The cost of the modification is determined by comparing the simulated contours with the target contours.
- If the cost is within a predetermined threshold, the modification is provided for fabricating the mask.
Original Abstract Submitted
A method includes receiving a layout for fabricating a mask, determining a plurality of target contours corresponding to a plurality of sets of lithographic process conditions, determining a modification to the layout, simulating the modification to the layout under the plurality of sets of lithographic process conditions to produce a plurality of simulated contours, determining a cost of the modification to the layout based on comparisons between the plurality of simulated contours and corresponding ones in the plurality of target contours, and providing the modification to the layout for fabricating the mask based at least in part on the cost being within a predetermined threshold.
