US Patent Application 18361771. SYSTEM AND METHOD FOR RESIDUAL GAS ANALYSIS simplified abstract
Contents
SYSTEM AND METHOD FOR RESIDUAL GAS ANALYSIS
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Yen-Liang Chen of Hsinchu (TW)
SYSTEM AND METHOD FOR RESIDUAL GAS ANALYSIS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18361771 titled 'SYSTEM AND METHOD FOR RESIDUAL GAS ANALYSIS
Simplified Explanation
- The patent application describes a system and method for detecting the condition of a processing chamber. - The method involves performing a wafer-less processing step in the chamber to assess the condition of the chamber walls. - By analyzing the residual gas produced during the wafer-less processing step, an operator or process controller can determine if the chamber walls need to be cleaned. - This approach allows for proactive maintenance of the processing chamber, potentially reducing downtime and improving overall efficiency.
Original Abstract Submitted
The present disclosure provides embodiments of a system and method for detecting processing chamber condition. The embodiments include performing a wafer-less processing step in a processing chamber to determine the condition of the chamber walls. Based on an analysis of the residual gas resulting from the wafer-less processing step, an operator or a process controller can determine whether the chamber walls have deteriorated to such an extent as to be cleaned.
