US Patent Application 18361754. THIN FILM METROLOGY simplified abstract
Contents
THIN FILM METROLOGY
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Chih Hung Chen of Hsinchu (TW)
THIN FILM METROLOGY - A simplified explanation of the abstract
This abstract first appeared for US patent application 18361754 titled 'THIN FILM METROLOGY
Simplified Explanation
- The patent application describes a method for evaluating the thickness of a film on a substrate. - The method involves using atomic force microscopy to detect the atomic force responses of the film when exposed to infrared radiation. - This approach avoids the underlayer noise that is commonly encountered when using optical metrology techniques to measure film thickness. - Underlayer noise can negatively affect the accuracy of thickness evaluations. - The innovation provides a more accurate and reliable way to measure the thickness of thin films on substrates.
Original Abstract Submitted
A method of evaluating a thickness of a film on a substrate includes detecting atomic force responses of the film to exposure of electromagnetic radiation in the infrared portion of the electromagnetic spectrum. The use of atomic force microscopy to evaluate thicknesses of thin films avoids underlayer noise commonly encountered when optical metrology techniques are utilized to evaluate film thicknesses. Such underlayer noise adversely impacts the accuracy of the thickness evaluation.
