US Patent Application 18361622. LEAKAGE REDUCTION METHODS AND STRUCTURES THEREOF simplified abstract
Contents
LEAKAGE REDUCTION METHODS AND STRUCTURES THEREOF
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Chia-Sheng Fan of Hsinchu County (TW)
Chun-Yen Lin of Hsinchu City (TW)
Tung-Heng Hsieh of Hsinchu County (TW)
Bao-Ru Young of Hsinchu County (TW)
LEAKAGE REDUCTION METHODS AND STRUCTURES THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18361622 titled 'LEAKAGE REDUCTION METHODS AND STRUCTURES THEREOF
Simplified Explanation
- The patent application describes a method and structure for reducing leakage current in devices with a continuous active region. - One approach is to increase the threshold voltage at the cell boundary by changing a photomask logic operation (LOP) to reverse the threshold voltage type at the boundary. - Another approach is to perform a threshold voltage implant, such as an ion implant, at the cell boundary and into a dummy gate located there. - Additionally, the threshold voltage at the cell boundary can be increased by using a silicon germanium (SiGe) channel. This can involve placing SiGe within the substrate at the boundary and/or incorporating SiGe into the dummy gate at the boundary.
Original Abstract Submitted
A method and structure for mitigating leakage current in devices that include a continuous active region. In some embodiments, a threshold voltage at the cell boundary is increased by changing a photomask logic operation (LOP) to reverse a threshold voltage type at the cell boundary. Alternatively, in some cases, the threshold voltage at the cell boundary is increased by performing a threshold voltage implant (e.g., an ion implant) at the cell boundary, and into a dummy gate disposed at the cell boundary. Further, in some embodiments, the threshold voltage at the cell boundary is increased by use of a silicon germanium (SiGe) channel at the cell boundary. In some cases, the SiGe may be disposed within the substrate at the cell boundary and/or the SiGe may be part of the dummy gate disposed at the cell boundary.
