US Patent Application 18361592. Semiconductor Device with Reduced Contact Resistance and Methods of Forming the Same simplified abstract
Semiconductor Device with Reduced Contact Resistance and Methods of Forming the Same
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Kuo-Chiang Tsai of Hsinchu City (TW)
Jhy-Huei Chen of Hsinchu City (TW)
Semiconductor Device with Reduced Contact Resistance and Methods of Forming the Same - A simplified explanation of the abstract
This abstract first appeared for US patent application 18361592 titled 'Semiconductor Device with Reduced Contact Resistance and Methods of Forming the Same
Simplified Explanation
The patent application describes a semiconductor device and a method for manufacturing it.
- The semiconductor device includes a substrate and a gate structure.
- The gate structure consists of a gate stack and spacers along its sidewalls.
- The gate stack includes a gate dielectric layer and a gate electrode.
- A first metal layer is placed over the gate stack, making lateral contact with the spacers.
- A gate via is positioned over the first metal layer.
- The invention aims to simplify the manufacturing process of semiconductor devices.
Original Abstract Submitted
Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary semiconductor device comprises a substrate; a gate structure disposed over the substrate and over a channel region of the semiconductor device, wherein the gate structure includes a gate stack and spacers disposed along sidewalls of the gate stack, the gate stack including a gate dielectric layer and a gate electrode; a first metal layer disposed over the gate stack, wherein the first metal layer laterally contacts the spacers over the gate dielectric layer and the gate electrode; and a gate via disposed over the first metal layer.
